Optical and electrical properties of wurtzite copper indium sulfide nanoflakes

John C.W. Ho; Sudip K. Batabyal; Stevin S. Pramana; Jiayi Lum; Viet T. Pham; Dehui Li; Qihua Xiong; Alfred I.Y. Tok; Lydia H. Wong

doi:10.1166/mex.2012.1091

Optical and electrical properties of wurtzite copper indium sulfide nanoflakes

John C.W. Ho, Sudip K. Batabyal, Stevin S. Pramana, Jiayi Lum, Viet T. Pham, Dehui Li, Qihua Xiong, Alfred I.Y. Tok, Lydia H. Wong

Nanyang Technological University

Research output: Contribution to journal › Article › peer-review

12 Citations (Scopus)

Abstract

Raman spectroscopic analysis and Hall measurement of wurtzite copper indium sulfide (CuInS₂) were carried out. Nanocrystalline wurtzite CuInS₂ (CIS) was synthesized by a solvothermal reaction route for these studies. It is observed that the amount of sulfur source, time and temperature of the reaction are the key to control wurtzite phase formation of CuInS₂. Wurtzite nanoflakes were formed at 150 °C, with ethylenediamine as the selected solvent and the ratio of Cu:In:S precursor was kept at 1.1:1:5. The Hall measurement resulted in sheet resistivity, °, of ~2 × 10⁵ Ω/sq, Hall coefficient of ~10 m²/C, mobility of ~0.5 cm²/V-s and hole concentration of ~7×10¹³/cm². Slight shift in the Raman spectra of 1-2 cm^-1 was observed between wurtzite and roquesite CuInS₂ and was attributed to the stoichiometric variation in Cu/In and/or changes in the chemical environments of the two crystal structures.

Original language	English
Pages (from-to)	344-350
Number of pages	7
Journal	Materials Express
Volume	2
Issue number	4
DOIs	https://doi.org/10.1166/mex.2012.1091
Publication status	Published - Dec 2012
Externally published	Yes

ASJC Scopus Subject Areas

General Materials Science

Keywords

Copper indium sulfide (CuInS)
Hall measurement
Optical properties
Solvothermal synthesis
Wurtzite

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title = "Optical and electrical properties of wurtzite copper indium sulfide nanoflakes",

abstract = "Raman spectroscopic analysis and Hall measurement of wurtzite copper indium sulfide (CuInS2) were carried out. Nanocrystalline wurtzite CuInS2 (CIS) was synthesized by a solvothermal reaction route for these studies. It is observed that the amount of sulfur source, time and temperature of the reaction are the key to control wurtzite phase formation of CuInS2. Wurtzite nanoflakes were formed at 150 °C, with ethylenediamine as the selected solvent and the ratio of Cu:In:S precursor was kept at 1.1:1:5. The Hall measurement resulted in sheet resistivity, °, of ~2 × 105 Ω/sq, Hall coefficient of ~10 m2/C, mobility of ~0.5 cm2/V-s and hole concentration of ~7×1013/cm2. Slight shift in the Raman spectra of 1-2 cm-1 was observed between wurtzite and roquesite CuInS2 and was attributed to the stoichiometric variation in Cu/In and/or changes in the chemical environments of the two crystal structures.",

keywords = "Copper indium sulfide (CuInS), Hall measurement, Optical properties, Solvothermal synthesis, Wurtzite",

author = "Ho, {John C.W.} and Batabyal, {Sudip K.} and Pramana, {Stevin S.} and Jiayi Lum and Pham, {Viet T.} and Dehui Li and Qihua Xiong and Tok, {Alfred I.Y.} and Wong, {Lydia H.}",

year = "2012",

month = dec,

doi = "10.1166/mex.2012.1091",

language = "English",

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pages = "344--350",

journal = "Materials Express",

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T1 - Optical and electrical properties of wurtzite copper indium sulfide nanoflakes

AU - Ho, John C.W.

AU - Batabyal, Sudip K.

AU - Pramana, Stevin S.

AU - Lum, Jiayi

AU - Pham, Viet T.

AU - Li, Dehui

AU - Xiong, Qihua

AU - Tok, Alfred I.Y.

AU - Wong, Lydia H.

PY - 2012/12

Y1 - 2012/12

N2 - Raman spectroscopic analysis and Hall measurement of wurtzite copper indium sulfide (CuInS2) were carried out. Nanocrystalline wurtzite CuInS2 (CIS) was synthesized by a solvothermal reaction route for these studies. It is observed that the amount of sulfur source, time and temperature of the reaction are the key to control wurtzite phase formation of CuInS2. Wurtzite nanoflakes were formed at 150 °C, with ethylenediamine as the selected solvent and the ratio of Cu:In:S precursor was kept at 1.1:1:5. The Hall measurement resulted in sheet resistivity, °, of ~2 × 105 Ω/sq, Hall coefficient of ~10 m2/C, mobility of ~0.5 cm2/V-s and hole concentration of ~7×1013/cm2. Slight shift in the Raman spectra of 1-2 cm-1 was observed between wurtzite and roquesite CuInS2 and was attributed to the stoichiometric variation in Cu/In and/or changes in the chemical environments of the two crystal structures.

AB - Raman spectroscopic analysis and Hall measurement of wurtzite copper indium sulfide (CuInS2) were carried out. Nanocrystalline wurtzite CuInS2 (CIS) was synthesized by a solvothermal reaction route for these studies. It is observed that the amount of sulfur source, time and temperature of the reaction are the key to control wurtzite phase formation of CuInS2. Wurtzite nanoflakes were formed at 150 °C, with ethylenediamine as the selected solvent and the ratio of Cu:In:S precursor was kept at 1.1:1:5. The Hall measurement resulted in sheet resistivity, °, of ~2 × 105 Ω/sq, Hall coefficient of ~10 m2/C, mobility of ~0.5 cm2/V-s and hole concentration of ~7×1013/cm2. Slight shift in the Raman spectra of 1-2 cm-1 was observed between wurtzite and roquesite CuInS2 and was attributed to the stoichiometric variation in Cu/In and/or changes in the chemical environments of the two crystal structures.

KW - Copper indium sulfide (CuInS)

KW - Hall measurement

KW - Optical properties

KW - Solvothermal synthesis

KW - Wurtzite

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Optical and electrical properties of wurtzite copper indium sulfide nanoflakes

Abstract

ASJC Scopus Subject Areas

Keywords

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