Optical properties of titania films prepared by off-plane filtered cathodic vacuum arc

Z. W. Zhao; B. K. Tay; S. P. Lau; G. Q. Yu

doi:10.1016/j.jcrysgro.2004.04.088

Optical properties of titania films prepared by off-plane filtered cathodic vacuum arc

Z. W. Zhao, B. K. Tay^*, S. P. Lau, G. Q. Yu

^*Corresponding author for this work

Nanyang Technological University

Research output: Contribution to journal › Conference article › peer-review

34 Citations (Scopus)

Abstract

Amorphous titania thin films were deposited by an off-plane filtered cathodic vacuum arc (FCVA) at a process pressure of 3.0×10 ^-4Torr at room temperature. Core level of Ti 2p_3/2 (458.3eV) and O 1s (529.9eV) obtained from XPS spectrum and their deviation in binding energy (ΔBE=71.6eV) indicate that only the Ti⁴⁺ of Ti oxidation state exists in the film and the film was of ideal stoichiometry. The film exhibits good optical properties, such as high transmittance and optical band gap. Moreover, it possesses bulk-like refractive index (up to 2.57 at 550nm) and lower extinction coefficient (∼10^-4 at 550nm) with smooth surface.

Original language	English
Pages (from-to)	543-546
Number of pages	4
Journal	Journal of Crystal Growth
Volume	268
Issue number	3-4 SPEC. ISS.
DOIs	https://doi.org/10.1016/j.jcrysgro.2004.04.088
Publication status	Published - Aug 1 2004
Externally published	Yes
Event	ICMAT 2003, Symposium H, Compound Semiconductors in Electronic - Singapore, Singapore Duration: Dec 7 2003 → Dec 12 2004

ASJC Scopus Subject Areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

Keywords

A3. Physical vapor deposition processes
B1. Oxides
B2. Dielectric materials

Access to Document

10.1016/j.jcrysgro.2004.04.088

Cite this

@article{e1cc348c886e4856bd6f4794dbb1a781,

title = "Optical properties of titania films prepared by off-plane filtered cathodic vacuum arc",

abstract = "Amorphous titania thin films were deposited by an off-plane filtered cathodic vacuum arc (FCVA) at a process pressure of 3.0×10 -4Torr at room temperature. Core level of Ti 2p3/2 (458.3eV) and O 1s (529.9eV) obtained from XPS spectrum and their deviation in binding energy (ΔBE=71.6eV) indicate that only the Ti4+ of Ti oxidation state exists in the film and the film was of ideal stoichiometry. The film exhibits good optical properties, such as high transmittance and optical band gap. Moreover, it possesses bulk-like refractive index (up to 2.57 at 550nm) and lower extinction coefficient (∼10-4 at 550nm) with smooth surface.",

keywords = "A3. Physical vapor deposition processes, B1. Oxides, B2. Dielectric materials",

author = "Zhao, \{Z. W.\} and Tay, \{B. K.\} and Lau, \{S. P.\} and Yu, \{G. Q.\}",

year = "2004",

month = aug,

day = "1",

doi = "10.1016/j.jcrysgro.2004.04.088",

language = "English",

volume = "268",

pages = "543--546",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier",

number = "3-4 SPEC. ISS.",

note = "ICMAT 2003, Symposium H, Compound Semiconductors in Electronic ; Conference date: 07-12-2003 Through 12-12-2004",

}

TY - JOUR

T1 - Optical properties of titania films prepared by off-plane filtered cathodic vacuum arc

AU - Zhao, Z. W.

AU - Tay, B. K.

AU - Lau, S. P.

AU - Yu, G. Q.

PY - 2004/8/1

Y1 - 2004/8/1

N2 - Amorphous titania thin films were deposited by an off-plane filtered cathodic vacuum arc (FCVA) at a process pressure of 3.0×10 -4Torr at room temperature. Core level of Ti 2p3/2 (458.3eV) and O 1s (529.9eV) obtained from XPS spectrum and their deviation in binding energy (ΔBE=71.6eV) indicate that only the Ti4+ of Ti oxidation state exists in the film and the film was of ideal stoichiometry. The film exhibits good optical properties, such as high transmittance and optical band gap. Moreover, it possesses bulk-like refractive index (up to 2.57 at 550nm) and lower extinction coefficient (∼10-4 at 550nm) with smooth surface.

AB - Amorphous titania thin films were deposited by an off-plane filtered cathodic vacuum arc (FCVA) at a process pressure of 3.0×10 -4Torr at room temperature. Core level of Ti 2p3/2 (458.3eV) and O 1s (529.9eV) obtained from XPS spectrum and their deviation in binding energy (ΔBE=71.6eV) indicate that only the Ti4+ of Ti oxidation state exists in the film and the film was of ideal stoichiometry. The film exhibits good optical properties, such as high transmittance and optical band gap. Moreover, it possesses bulk-like refractive index (up to 2.57 at 550nm) and lower extinction coefficient (∼10-4 at 550nm) with smooth surface.

KW - A3. Physical vapor deposition processes

KW - B1. Oxides

KW - B2. Dielectric materials

UR - http://www.scopus.com/inward/record.url?scp=3142749113&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=3142749113&partnerID=8YFLogxK

U2 - 10.1016/j.jcrysgro.2004.04.088

DO - 10.1016/j.jcrysgro.2004.04.088

M3 - Conference article

AN - SCOPUS:3142749113

SN - 0022-0248

VL - 268

SP - 543

EP - 546

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 3-4 SPEC. ISS.

T2 - ICMAT 2003, Symposium H, Compound Semiconductors in Electronic

Y2 - 7 December 2003 through 12 December 2004

ER -

Optical properties of titania films prepared by off-plane filtered cathodic vacuum arc

Abstract

ASJC Scopus Subject Areas

Keywords

Access to Document

Other files and links

Fingerprint

Cite this