Organic FETs with HWCVD silicon nitride as a passivation layer and gate dielectric

S. P. Tiwari; P. Srinivas; S. Shriram; Nitin S. Kale; S. G. Mhaisalkar; V. Ramgopal Rao

doi:10.1016/j.tsf.2007.06.048

Organic FETs with HWCVD silicon nitride as a passivation layer and gate dielectric

S. P. Tiwari, P. Srinivas, S. Shriram, Nitin S. Kale, S. G. Mhaisalkar, V. Ramgopal Rao^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

29 Citations (Scopus)

Abstract

This paper reports the use of hot-wire chemical vapour deposited (HWCVD) Silicon nitride as a passivation layer for Organic Field Effect Transistors (OFETs). Firstly, the degradation study of the OFETs is done with time. A thin (10-20 nm) layer of silicon nitride is deposited on the OFETs, at a low temperature (< 90 °C) by HWCVD process, to passivate them from the ambient. Our results show that this technique is very effective in improving the stability of the organic semiconductors (Poly-3-hexyl thiophene (P3HT) is used as a test case in this study). This HWCVD deposited nitride can also be used as a gate dielectric material for the study of OFETs because of its higher dielectric constant and significantly less hydrogen content.

Original language	English
Pages (from-to)	770-772
Number of pages	3
Journal	Thin Solid Films
Volume	516
Issue number	5
DOIs	https://doi.org/10.1016/j.tsf.2007.06.048
Publication status	Published - Jan 15 2008
Externally published	Yes

ASJC Scopus Subject Areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

Keywords

HWCVD
Mobility
ON/OFF ratio
Organic Field Effect Transistor (OFET)
Passivation

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10.1016/j.tsf.2007.06.048

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title = "Organic FETs with HWCVD silicon nitride as a passivation layer and gate dielectric",

abstract = "This paper reports the use of hot-wire chemical vapour deposited (HWCVD) Silicon nitride as a passivation layer for Organic Field Effect Transistors (OFETs). Firstly, the degradation study of the OFETs is done with time. A thin (10-20 nm) layer of silicon nitride is deposited on the OFETs, at a low temperature (< 90 °C) by HWCVD process, to passivate them from the ambient. Our results show that this technique is very effective in improving the stability of the organic semiconductors (Poly-3-hexyl thiophene (P3HT) is used as a test case in this study). This HWCVD deposited nitride can also be used as a gate dielectric material for the study of OFETs because of its higher dielectric constant and significantly less hydrogen content.",

keywords = "HWCVD, Mobility, ON/OFF ratio, Organic Field Effect Transistor (OFET), Passivation",

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T1 - Organic FETs with HWCVD silicon nitride as a passivation layer and gate dielectric

AU - Tiwari, S. P.

AU - Srinivas, P.

AU - Shriram, S.

AU - Kale, Nitin S.

AU - Mhaisalkar, S. G.

AU - Ramgopal Rao, V.

PY - 2008/1/15

Y1 - 2008/1/15

N2 - This paper reports the use of hot-wire chemical vapour deposited (HWCVD) Silicon nitride as a passivation layer for Organic Field Effect Transistors (OFETs). Firstly, the degradation study of the OFETs is done with time. A thin (10-20 nm) layer of silicon nitride is deposited on the OFETs, at a low temperature (< 90 °C) by HWCVD process, to passivate them from the ambient. Our results show that this technique is very effective in improving the stability of the organic semiconductors (Poly-3-hexyl thiophene (P3HT) is used as a test case in this study). This HWCVD deposited nitride can also be used as a gate dielectric material for the study of OFETs because of its higher dielectric constant and significantly less hydrogen content.

AB - This paper reports the use of hot-wire chemical vapour deposited (HWCVD) Silicon nitride as a passivation layer for Organic Field Effect Transistors (OFETs). Firstly, the degradation study of the OFETs is done with time. A thin (10-20 nm) layer of silicon nitride is deposited on the OFETs, at a low temperature (< 90 °C) by HWCVD process, to passivate them from the ambient. Our results show that this technique is very effective in improving the stability of the organic semiconductors (Poly-3-hexyl thiophene (P3HT) is used as a test case in this study). This HWCVD deposited nitride can also be used as a gate dielectric material for the study of OFETs because of its higher dielectric constant and significantly less hydrogen content.

KW - HWCVD

KW - Mobility

KW - ON/OFF ratio

KW - Organic Field Effect Transistor (OFET)

KW - Passivation

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DO - 10.1016/j.tsf.2007.06.048

M3 - Article

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SN - 0040-6090

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SP - 770

EP - 772

JO - Thin Solid Films

JF - Thin Solid Films

IS - 5

ER -

Organic FETs with HWCVD silicon nitride as a passivation layer and gate dielectric

Abstract

ASJC Scopus Subject Areas

Keywords

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