Origin of physical degradation in AlGaN/GaN on Si high electron mobility transistors under reverse bias stressing

W. A. Sasangka; G. J. Syaranamual; C. L. Gan; C. V. Thompson

doi:10.1109/IRPS.2015.7112768

Origin of physical degradation in AlGaN/GaN on Si high electron mobility transistors under reverse bias stressing

W. A. Sasangka, G. J. Syaranamual, C. L. Gan, C. V. Thompson

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

12 Citations (Scopus)

Abstract

We have investigated the role of threading dislocations in pit formation during stressing of AlGaN/GaN on Si high electron mobility transistors under high reverse bias. Upon stressing, the drain current saturation (I_D-saturation) decreases over time. The amount of I_D-saturation degradation correlates well with pit formation at the gate-edge, where the electric field is the highest. Using a transmission electron microscope weak-beam technique, it is found that pits tend to nucleate at threading dislocations that have a screw component, even when these dislocations are at locations away from the gate-edge. An explanation based on an electrochemical oxidation model is proposed.

Original language	English
Title of host publication	2015 IEEE International Reliability Physics Symposium, IRPS 2015
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	6C31-6C34
ISBN (Electronic)	9781467373623
DOIs	https://doi.org/10.1109/IRPS.2015.7112768
Publication status	Published - May 26 2015
Externally published	Yes
Event	IEEE International Reliability Physics Symposium, IRPS 2015 - Monterey, United States Duration: Apr 19 2015 → Apr 23 2015

Publication series

Name	IEEE International Reliability Physics Symposium Proceedings
Volume	2015-May
ISSN (Print)	1541-7026

Conference

Conference	IEEE International Reliability Physics Symposium, IRPS 2015
Country/Territory	United States
City	Monterey
Period	4/19/15 → 4/23/15

Bibliographical note

Publisher Copyright:
© 2015 IEEE.

ASJC Scopus Subject Areas

General Engineering

Keywords

AlGaN/GaN
HEMT
reliability
threading dislocations

Access to Document

10.1109/IRPS.2015.7112768

Cite this

Sasangka, W. A., Syaranamual, G. J., Gan, C. L., & Thompson, C. V. (2015). Origin of physical degradation in AlGaN/GaN on Si high electron mobility transistors under reverse bias stressing. In 2015 IEEE International Reliability Physics Symposium, IRPS 2015 (pp. 6C31-6C34). Article 7112768 (IEEE International Reliability Physics Symposium Proceedings; Vol. 2015-May). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IRPS.2015.7112768

Sasangka, W. A. ; Syaranamual, G. J. ; Gan, C. L. et al. / Origin of physical degradation in AlGaN/GaN on Si high electron mobility transistors under reverse bias stressing. 2015 IEEE International Reliability Physics Symposium, IRPS 2015. Institute of Electrical and Electronics Engineers Inc., 2015. pp. 6C31-6C34 (IEEE International Reliability Physics Symposium Proceedings).

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title = "Origin of physical degradation in AlGaN/GaN on Si high electron mobility transistors under reverse bias stressing",

abstract = "We have investigated the role of threading dislocations in pit formation during stressing of AlGaN/GaN on Si high electron mobility transistors under high reverse bias. Upon stressing, the drain current saturation (ID-saturation) decreases over time. The amount of ID-saturation degradation correlates well with pit formation at the gate-edge, where the electric field is the highest. Using a transmission electron microscope weak-beam technique, it is found that pits tend to nucleate at threading dislocations that have a screw component, even when these dislocations are at locations away from the gate-edge. An explanation based on an electrochemical oxidation model is proposed.",

keywords = "AlGaN/GaN, HEMT, reliability, threading dislocations",

author = "Sasangka, {W. A.} and Syaranamual, {G. J.} and Gan, {C. L.} and Thompson, {C. V.}",

note = "Publisher Copyright: {\textcopyright} 2015 IEEE.; IEEE International Reliability Physics Symposium, IRPS 2015 ; Conference date: 19-04-2015 Through 23-04-2015",

year = "2015",

month = may,

day = "26",

doi = "10.1109/IRPS.2015.7112768",

language = "English",

series = "IEEE International Reliability Physics Symposium Proceedings",

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Sasangka, WA, Syaranamual, GJ, Gan, CL & Thompson, CV 2015, Origin of physical degradation in AlGaN/GaN on Si high electron mobility transistors under reverse bias stressing. in 2015 IEEE International Reliability Physics Symposium, IRPS 2015., 7112768, IEEE International Reliability Physics Symposium Proceedings, vol. 2015-May, Institute of Electrical and Electronics Engineers Inc., pp. 6C31-6C34, IEEE International Reliability Physics Symposium, IRPS 2015, Monterey, United States, 4/19/15. https://doi.org/10.1109/IRPS.2015.7112768

Origin of physical degradation in AlGaN/GaN on Si high electron mobility transistors under reverse bias stressing. / Sasangka, W. A.; Syaranamual, G. J.; Gan, C. L. et al.
2015 IEEE International Reliability Physics Symposium, IRPS 2015. Institute of Electrical and Electronics Engineers Inc., 2015. p. 6C31-6C34 7112768 (IEEE International Reliability Physics Symposium Proceedings; Vol. 2015-May).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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N2 - We have investigated the role of threading dislocations in pit formation during stressing of AlGaN/GaN on Si high electron mobility transistors under high reverse bias. Upon stressing, the drain current saturation (ID-saturation) decreases over time. The amount of ID-saturation degradation correlates well with pit formation at the gate-edge, where the electric field is the highest. Using a transmission electron microscope weak-beam technique, it is found that pits tend to nucleate at threading dislocations that have a screw component, even when these dislocations are at locations away from the gate-edge. An explanation based on an electrochemical oxidation model is proposed.

AB - We have investigated the role of threading dislocations in pit formation during stressing of AlGaN/GaN on Si high electron mobility transistors under high reverse bias. Upon stressing, the drain current saturation (ID-saturation) decreases over time. The amount of ID-saturation degradation correlates well with pit formation at the gate-edge, where the electric field is the highest. Using a transmission electron microscope weak-beam technique, it is found that pits tend to nucleate at threading dislocations that have a screw component, even when these dislocations are at locations away from the gate-edge. An explanation based on an electrochemical oxidation model is proposed.

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KW - threading dislocations

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Sasangka WA, Syaranamual GJ, Gan CL, Thompson CV. Origin of physical degradation in AlGaN/GaN on Si high electron mobility transistors under reverse bias stressing. In 2015 IEEE International Reliability Physics Symposium, IRPS 2015. Institute of Electrical and Electronics Engineers Inc. 2015. p. 6C31-6C34. 7112768. (IEEE International Reliability Physics Symposium Proceedings). doi: 10.1109/IRPS.2015.7112768

Origin of physical degradation in AlGaN/GaN on Si high electron mobility transistors under reverse bias stressing

Abstract

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Keywords

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