Fingerprint
Dive into the research topics of 'Origin of physical degradation in AlGaN/GaN on Si high electron mobility transistors under reverse bias stressing'. Together they form a unique fingerprint.- Sort by
- Weight
- Alphabetically
Origin of physical degradation in AlGaN/GaN on Si high electron mobility transistors under reverse bias stressing
W. A. Sasangka, G. J. Syaranamual, C. L. Gan, C. V. Thompson
Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
12
Citations
(Scopus)