Oxygen lone-pair states near the valence band edge of aluminum oxide thin films

Z. W. Zhao; B. K. Tay; Chang Q. Sun; V. Ligatchev

doi:10.1063/1.1686905

Oxygen lone-pair states near the valence band edge of aluminum oxide thin films

Z. W. Zhao, B. K. Tay^*, Chang Q. Sun, V. Ligatchev

^*Corresponding author for this work

Nanyang Technological University

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

Three outstanding midgap density-of-states (DOS) features of aluminum (Al) oxide was identified with deep level transient spectroscopy (DLTS) and optical absorption spectroscopy. The DOS feature at 0.39 eV, which disappears at 200°C was assigned as the amorphous band tail states. The two midgap lone-pair states at 1.0 and 1.3 eV disappear at 400°C, which conincides with x-ray photoelectron spectroscopic DOS features from other metal-oxide surfaces. The results show that the absorption coefficient for the annealed films depends on the annealing temperature, especially in the range of higher photon energy.

Original language	English
Pages (from-to)	4147-4150
Number of pages	4
Journal	Journal of Applied Physics
Volume	95
Issue number	8
DOIs	https://doi.org/10.1063/1.1686905
Publication status	Published - Apr 15 2004
Externally published	Yes

ASJC Scopus Subject Areas

General Physics and Astronomy

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title = "Oxygen lone-pair states near the valence band edge of aluminum oxide thin films",

abstract = "Three outstanding midgap density-of-states (DOS) features of aluminum (Al) oxide was identified with deep level transient spectroscopy (DLTS) and optical absorption spectroscopy. The DOS feature at 0.39 eV, which disappears at 200°C was assigned as the amorphous band tail states. The two midgap lone-pair states at 1.0 and 1.3 eV disappear at 400°C, which conincides with x-ray photoelectron spectroscopic DOS features from other metal-oxide surfaces. The results show that the absorption coefficient for the annealed films depends on the annealing temperature, especially in the range of higher photon energy.",

author = "Zhao, {Z. W.} and Tay, {B. K.} and Sun, {Chang Q.} and V. Ligatchev",

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T1 - Oxygen lone-pair states near the valence band edge of aluminum oxide thin films

AU - Zhao, Z. W.

AU - Tay, B. K.

AU - Sun, Chang Q.

AU - Ligatchev, V.

PY - 2004/4/15

Y1 - 2004/4/15

N2 - Three outstanding midgap density-of-states (DOS) features of aluminum (Al) oxide was identified with deep level transient spectroscopy (DLTS) and optical absorption spectroscopy. The DOS feature at 0.39 eV, which disappears at 200°C was assigned as the amorphous band tail states. The two midgap lone-pair states at 1.0 and 1.3 eV disappear at 400°C, which conincides with x-ray photoelectron spectroscopic DOS features from other metal-oxide surfaces. The results show that the absorption coefficient for the annealed films depends on the annealing temperature, especially in the range of higher photon energy.

AB - Three outstanding midgap density-of-states (DOS) features of aluminum (Al) oxide was identified with deep level transient spectroscopy (DLTS) and optical absorption spectroscopy. The DOS feature at 0.39 eV, which disappears at 200°C was assigned as the amorphous band tail states. The two midgap lone-pair states at 1.0 and 1.3 eV disappear at 400°C, which conincides with x-ray photoelectron spectroscopic DOS features from other metal-oxide surfaces. The results show that the absorption coefficient for the annealed films depends on the annealing temperature, especially in the range of higher photon energy.

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JO - Journal of Applied Physics

JF - Journal of Applied Physics

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ER -

Oxygen lone-pair states near the valence band edge of aluminum oxide thin films

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