TY - GEN
T1 - Pd Surface modification of sno2-based nanorod arrays for h2 gas sensors
AU - Huang, Hui
AU - Lee, Y. C.
AU - Chow, C. L.
AU - Ong, C. Y.
AU - Tse, M. S.
AU - Tan, O. K.
PY - 2008
Y1 - 2008
N2 - In this work, SnO2 nanorod arrays have been deposited by inductively coupled plasma-enhanced chemical vapor deposition (PECVD) without any high temperature treatment or additional catalysis. The SnO2 nanorods are connected at the root with a very thin seed layer on the substrate. The SnO2 nanorods have a spatial distribution density of 350 μm-2 and large surface area of around 108 m2/g. Pd was chemically modified on surface of the SnO2 nanorods by spin coating. The sensitivity of the SnO2 nanorod arrays increased around 4 times after doping with 1 layer of Pd, but decreased continuously with increasing Pd layers. The effect of the annealing temperature on the sensing properties was also studied and it was found that annealing at 500°C is enough to achieve better performance of the Pd-doped SnO2 nanorod array sensor.
AB - In this work, SnO2 nanorod arrays have been deposited by inductively coupled plasma-enhanced chemical vapor deposition (PECVD) without any high temperature treatment or additional catalysis. The SnO2 nanorods are connected at the root with a very thin seed layer on the substrate. The SnO2 nanorods have a spatial distribution density of 350 μm-2 and large surface area of around 108 m2/g. Pd was chemically modified on surface of the SnO2 nanorods by spin coating. The sensitivity of the SnO2 nanorod arrays increased around 4 times after doping with 1 layer of Pd, but decreased continuously with increasing Pd layers. The effect of the annealing temperature on the sensing properties was also studied and it was found that annealing at 500°C is enough to achieve better performance of the Pd-doped SnO2 nanorod array sensor.
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U2 - 10.1109/ICSENS.2008.4716396
DO - 10.1109/ICSENS.2008.4716396
M3 - Conference contribution
AN - SCOPUS:67649962649
SN - 9781424425808
T3 - Proceedings of IEEE Sensors
SP - 114
EP - 117
BT - 2008 IEEE Sensors, SENSORS 2008
T2 - 2008 IEEE Sensors, SENSORS 2008
Y2 - 26 October 2008 through 29 October 2009
ER -