Performance Optimization of Atomic Layer Deposited HfOxMemristor by Annealing With Back-End-of-Line Compatibility

Hong Chen; Lianzheng Li; Jinbin Wang; Guangchao Zhao; Yida Li; Jun Lan; Beng Kang Tay; Gaokuo Zhong; Jiangyu Li; Mingqiang Huang

doi:10.1109/LED.2022.3177774

Performance Optimization of Atomic Layer Deposited HfO_xMemristor by Annealing With Back-End-of-Line Compatibility

Hong Chen, Lianzheng Li, Jinbin Wang, Guangchao Zhao, Yida Li, Jun Lan, Beng Kang Tay, Gaokuo Zhong^*, Jiangyu Li^*, Mingqiang Huang^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

14 Citations (Scopus)

Abstract

Hafnium oxide (HfOx) memristor has attracted enormous attention due to its high performance and back-end-of-line (BEOL) compatibility, thus providing a novel approach to implementing artificial intelligence neural networks. In this work, great performance optimization of HfOx memristor has been achieved by using atomic layer deposition (ALD) method and post-metal annealing (PMA) process, in which both procedures are with low-temperature budget (< 300 °C) and are compatible with CMOS BEOL process. The device exhibits forming-free, high yield, good linearity, fast speed and non-volatile characteristics. Besides, the device conductance can be well modulated by using the most desired pulse protocol, namely the identical pulse with same pulse amplitude and width. More than 3bit stable conductance states have been obtained, indicating its great potential in practical memristor neuromorphic computing system.

Original language	English
Pages (from-to)	1141-1144
Number of pages	4
Journal	IEEE Electron Device Letters
Volume	43
Issue number	7
DOIs	https://doi.org/10.1109/LED.2022.3177774
Publication status	Published - Jul 1 2022
Externally published	Yes

Bibliographical note

Publisher Copyright:
© 1980-2012 IEEE.

ASJC Scopus Subject Areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Keywords

ALD
annealing
HfOx memristor

Access to Document

10.1109/LED.2022.3177774

Cite this

@article{3e434eaafde2477d9a8e786086ef1c2c,

title = "Performance Optimization of Atomic Layer Deposited HfOxMemristor by Annealing With Back-End-of-Line Compatibility",

abstract = "Hafnium oxide (HfOx) memristor has attracted enormous attention due to its high performance and back-end-of-line (BEOL) compatibility, thus providing a novel approach to implementing artificial intelligence neural networks. In this work, great performance optimization of HfOx memristor has been achieved by using atomic layer deposition (ALD) method and post-metal annealing (PMA) process, in which both procedures are with low-temperature budget (< 300 °C) and are compatible with CMOS BEOL process. The device exhibits forming-free, high yield, good linearity, fast speed and non-volatile characteristics. Besides, the device conductance can be well modulated by using the most desired pulse protocol, namely the identical pulse with same pulse amplitude and width. More than 3bit stable conductance states have been obtained, indicating its great potential in practical memristor neuromorphic computing system.",

keywords = "ALD, annealing, HfOx memristor",

author = "Hong Chen and Lianzheng Li and Jinbin Wang and Guangchao Zhao and Yida Li and Jun Lan and Tay, {Beng Kang} and Gaokuo Zhong and Jiangyu Li and Mingqiang Huang",

note = "Publisher Copyright: {\textcopyright} 1980-2012 IEEE.",

year = "2022",

month = jul,

day = "1",

doi = "10.1109/LED.2022.3177774",

language = "English",

volume = "43",

pages = "1141--1144",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "7",

}

TY - JOUR

T1 - Performance Optimization of Atomic Layer Deposited HfOxMemristor by Annealing With Back-End-of-Line Compatibility

AU - Chen, Hong

AU - Li, Lianzheng

AU - Wang, Jinbin

AU - Zhao, Guangchao

AU - Li, Yida

AU - Lan, Jun

AU - Tay, Beng Kang

AU - Zhong, Gaokuo

AU - Li, Jiangyu

AU - Huang, Mingqiang

PY - 2022/7/1

Y1 - 2022/7/1

N2 - Hafnium oxide (HfOx) memristor has attracted enormous attention due to its high performance and back-end-of-line (BEOL) compatibility, thus providing a novel approach to implementing artificial intelligence neural networks. In this work, great performance optimization of HfOx memristor has been achieved by using atomic layer deposition (ALD) method and post-metal annealing (PMA) process, in which both procedures are with low-temperature budget (< 300 °C) and are compatible with CMOS BEOL process. The device exhibits forming-free, high yield, good linearity, fast speed and non-volatile characteristics. Besides, the device conductance can be well modulated by using the most desired pulse protocol, namely the identical pulse with same pulse amplitude and width. More than 3bit stable conductance states have been obtained, indicating its great potential in practical memristor neuromorphic computing system.

AB - Hafnium oxide (HfOx) memristor has attracted enormous attention due to its high performance and back-end-of-line (BEOL) compatibility, thus providing a novel approach to implementing artificial intelligence neural networks. In this work, great performance optimization of HfOx memristor has been achieved by using atomic layer deposition (ALD) method and post-metal annealing (PMA) process, in which both procedures are with low-temperature budget (< 300 °C) and are compatible with CMOS BEOL process. The device exhibits forming-free, high yield, good linearity, fast speed and non-volatile characteristics. Besides, the device conductance can be well modulated by using the most desired pulse protocol, namely the identical pulse with same pulse amplitude and width. More than 3bit stable conductance states have been obtained, indicating its great potential in practical memristor neuromorphic computing system.

KW - ALD

KW - annealing

KW - HfOx memristor

UR - http://www.scopus.com/inward/record.url?scp=85130800481&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85130800481&partnerID=8YFLogxK

U2 - 10.1109/LED.2022.3177774

DO - 10.1109/LED.2022.3177774

M3 - Article

AN - SCOPUS:85130800481

SN - 0741-3106

VL - 43

SP - 1141

EP - 1144

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 7

ER -