Periodically Aligned Si Nanopillar Arrays as Efficient Antireflection Layers for Solar Cell Applications

Xiaocheng Li; Junshuai Li; Ting Chen; Beng Kang Tay; Jianxiong Wang; Hongyu Yu

doi:10.1007/s11671-010-9701-3

Periodically Aligned Si Nanopillar Arrays as Efficient Antireflection Layers for Solar Cell Applications

Xiaocheng Li^*, Junshuai Li, Ting Chen, Beng Kang Tay, Jianxiong Wang, Hongyu Yu

^*Corresponding author for this work

Nanyang Technological University

Research output: Contribution to journal › Article › peer-review

67 Citations (Scopus)

Abstract

Periodically aligned Si nanopillar (PASiNP) arrays were fabricated on Si substrate via a silver-catalyzed chemical etching process using the diameter-reduced polystyrene spheres as mask. The typical sub-wavelength structure of PASiNP arrays had excellent antireflection property with a low reflection loss of 2.84% for incident light within the wavelength range of 200-1,000 nm. The solar cell incorporated with the PASiNP arrays exhibited a power conversion efficiency (PCE) of ~9.24% with a short circuit current density (J _SC) of ~29.5 mA/cm ² without using any extra surface passivation technique. The high PCE of PASiNP array-based solar cell was attributed to the excellent antireflection property of the special periodical Si nanostructure.

Original language	English
Pages (from-to)	1721-1726
Number of pages	6
Journal	Nanoscale Research Letters
Volume	5
Issue number	11
DOIs	https://doi.org/10.1007/s11671-010-9701-3
Publication status	Published - Nov 2010
Externally published	Yes

ASJC Scopus Subject Areas

General Materials Science
Condensed Matter Physics

Keywords

Antireflection
Chemical etching
Periodicity
Si nanopillar arrays
Solar cell

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10.1007/s11671-010-9701-3

Cite this

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title = "Periodically Aligned Si Nanopillar Arrays as Efficient Antireflection Layers for Solar Cell Applications",

abstract = "Periodically aligned Si nanopillar (PASiNP) arrays were fabricated on Si substrate via a silver-catalyzed chemical etching process using the diameter-reduced polystyrene spheres as mask. The typical sub-wavelength structure of PASiNP arrays had excellent antireflection property with a low reflection loss of 2.84% for incident light within the wavelength range of 200-1,000 nm. The solar cell incorporated with the PASiNP arrays exhibited a power conversion efficiency (PCE) of ~9.24% with a short circuit current density (J SC) of ~29.5 mA/cm 2 without using any extra surface passivation technique. The high PCE of PASiNP array-based solar cell was attributed to the excellent antireflection property of the special periodical Si nanostructure.",

keywords = "Antireflection, Chemical etching, Periodicity, Si nanopillar arrays, Solar cell",

author = "Xiaocheng Li and Junshuai Li and Ting Chen and Tay, {Beng Kang} and Jianxiong Wang and Hongyu Yu",

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T1 - Periodically Aligned Si Nanopillar Arrays as Efficient Antireflection Layers for Solar Cell Applications

AU - Li, Xiaocheng

AU - Li, Junshuai

AU - Chen, Ting

AU - Tay, Beng Kang

AU - Wang, Jianxiong

AU - Yu, Hongyu

PY - 2010/11

Y1 - 2010/11

N2 - Periodically aligned Si nanopillar (PASiNP) arrays were fabricated on Si substrate via a silver-catalyzed chemical etching process using the diameter-reduced polystyrene spheres as mask. The typical sub-wavelength structure of PASiNP arrays had excellent antireflection property with a low reflection loss of 2.84% for incident light within the wavelength range of 200-1,000 nm. The solar cell incorporated with the PASiNP arrays exhibited a power conversion efficiency (PCE) of ~9.24% with a short circuit current density (J SC) of ~29.5 mA/cm 2 without using any extra surface passivation technique. The high PCE of PASiNP array-based solar cell was attributed to the excellent antireflection property of the special periodical Si nanostructure.

AB - Periodically aligned Si nanopillar (PASiNP) arrays were fabricated on Si substrate via a silver-catalyzed chemical etching process using the diameter-reduced polystyrene spheres as mask. The typical sub-wavelength structure of PASiNP arrays had excellent antireflection property with a low reflection loss of 2.84% for incident light within the wavelength range of 200-1,000 nm. The solar cell incorporated with the PASiNP arrays exhibited a power conversion efficiency (PCE) of ~9.24% with a short circuit current density (J SC) of ~29.5 mA/cm 2 without using any extra surface passivation technique. The high PCE of PASiNP array-based solar cell was attributed to the excellent antireflection property of the special periodical Si nanostructure.

KW - Antireflection

KW - Chemical etching

KW - Periodicity

KW - Si nanopillar arrays

KW - Solar cell

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Periodically Aligned Si Nanopillar Arrays as Efficient Antireflection Layers for Solar Cell Applications

Abstract

ASJC Scopus Subject Areas

Keywords

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