@inproceedings{3943f2b5554b4ce09e2e5ebec3a5d818,
title = "Phosphorus implant for S/D extension formation: Diffusion and activation study after spacer and spike anneal",
abstract = "Formation of highly activated S/D extension is one of the key issues to meet the requirements for further downscaling of CMOS devices. Germanium-preamorphization implant (Ge-PAI) followed by solid phase epitaxial regrowth (SPER) is capable of forming abrupt and shallow junctions with activation levels well above solid solubility. In this paper, we demonstrate a possible alternative by using phosphorus (P) with the Ge-PAI and boron (B) Halo implant to form the S/D extension of NMOS. The anomalous diffusion and activation of P after the conventional spacer and spike anneals were studied. We observed that a highly activated and shallow junction can be formed via Ge-PAI after spacer anneal which is equivalent to a low temperature SPER. The level of P activation is enhanced even more when B Halo is considered. It is postulated that this is due to the competing interactions of B and P with the emitted interstitials of the end-of-range (EOR) defects. However, improvement in junction depth and electrical properties due to B halo implant decreases when annealing temperature increases.",
keywords = "Ge-pai, Halo implant, Phosphorus, Spacer anneal, SPER, Spike anneal",
author = "Yeong, {S. H.} and B. Colombeau and F. Benistant and Srinivasan, {M. P.} and Mulcahy, {C. P.A.} and Lee, {P. S.} and L. Chan",
year = "2006",
doi = "10.1063/1.2401461",
language = "English",
isbn = "0735403651",
series = "AIP Conference Proceedings",
publisher = "American Institute of Physics Inc.",
pages = "58--61",
booktitle = "ION IMPLANTATION TECHNOLOGY",
note = "ION IMPLANTATION TECHNOLOGY: 16th International Conference on Ion Implantation Technology, IIT 2006 ; Conference date: 11-06-2006 Through 16-11-2006",
}