Photoluminescence study of ZnO films prepared by thermal oxidation of Zn metallic films in air

Y. G. Wang*, S. P. Lau, H. W. Lee, S. F. Yu, B. K. Tay, X. H. Zhang, H. H. Hng

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

436 Citations (Scopus)

Abstract

Zinc oxide (ZnO) films were synthesized by thermal oxidation of metallic zinc films in air. The influence of annealing temperatures ranging from 320 to 1000°C on the structural and optical properties of ZnO films was also investigated using x-ray diffraction and room temperature photoluminescence (PL). It was observed that the ZnO film annealed at 410°C exhibits the strongest UV emission intensity and narrowest full width at half maximum among the temperature ranges studied.

Original languageEnglish
Pages (from-to)354-358
Number of pages5
JournalJournal of Applied Physics
Volume94
Issue number1
DOIs
Publication statusPublished - Jul 1 2003
Externally publishedYes

ASJC Scopus Subject Areas

  • General Physics and Astronomy

Fingerprint

Dive into the research topics of 'Photoluminescence study of ZnO films prepared by thermal oxidation of Zn metallic films in air'. Together they form a unique fingerprint.

Cite this