Photophysical investigation of charge recombination in CdS/ZnO layers of CuIn(S,Se)2 solar cell

Venkatram Nalla; John C.W. Ho; Sudip K. Batabyal; Yue Wang; Alfred I.Y. Tok; Handong Sun; Lydia H. Wong; Nikolay Zheludev

doi:10.1039/c4ra10933c

Photophysical investigation of charge recombination in CdS/ZnO layers of CuIn(S,Se)₂ solar cell

Venkatram Nalla^*, John C.W. Ho, Sudip K. Batabyal, Yue Wang, Alfred I.Y. Tok, Handong Sun, Lydia H. Wong, Nikolay Zheludev

^*Corresponding author for this work

Nanyang Technological University

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

Excitation wavelength dependent femtosecond transient photocurrents were measured on CuIn(S,Se)₂ solar cell devices, in the range of 330-1300 nm. Below 450 nm wavelength excitations, charge recombination in CdS/ZnO layers is determined to be responsible for longer decays and lower EQE. Femtosecond pump-probe measurements also support the charge transfer and recombination in CdS/ZnO layers. These measurements will be helpful to design high efficiency CISSe solar cells, by selecting suitable buffer layers.

Original language	English
Pages (from-to)	58372-58376
Number of pages	5
Journal	RSC Advances
Volume	4
Issue number	102
DOIs	https://doi.org/10.1039/c4ra10933c
Publication status	Published - Oct 28 2014
Externally published	Yes

Bibliographical note

Publisher Copyright:
© 2014 The Royal Society of Chemistry.

ASJC Scopus Subject Areas

General Chemistry
General Chemical Engineering

Access to Document

10.1039/c4ra10933c

Cite this

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title = "Photophysical investigation of charge recombination in CdS/ZnO layers of CuIn(S,Se)2 solar cell",

abstract = "Excitation wavelength dependent femtosecond transient photocurrents were measured on CuIn(S,Se)2 solar cell devices, in the range of 330-1300 nm. Below 450 nm wavelength excitations, charge recombination in CdS/ZnO layers is determined to be responsible for longer decays and lower EQE. Femtosecond pump-probe measurements also support the charge transfer and recombination in CdS/ZnO layers. These measurements will be helpful to design high efficiency CISSe solar cells, by selecting suitable buffer layers.",

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note = "Publisher Copyright: {\textcopyright} 2014 The Royal Society of Chemistry.",

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T1 - Photophysical investigation of charge recombination in CdS/ZnO layers of CuIn(S,Se)2 solar cell

AU - Nalla, Venkatram

AU - Ho, John C.W.

AU - Batabyal, Sudip K.

AU - Wang, Yue

AU - Tok, Alfred I.Y.

AU - Sun, Handong

AU - Wong, Lydia H.

AU - Zheludev, Nikolay

PY - 2014/10/28

Y1 - 2014/10/28

N2 - Excitation wavelength dependent femtosecond transient photocurrents were measured on CuIn(S,Se)2 solar cell devices, in the range of 330-1300 nm. Below 450 nm wavelength excitations, charge recombination in CdS/ZnO layers is determined to be responsible for longer decays and lower EQE. Femtosecond pump-probe measurements also support the charge transfer and recombination in CdS/ZnO layers. These measurements will be helpful to design high efficiency CISSe solar cells, by selecting suitable buffer layers.

AB - Excitation wavelength dependent femtosecond transient photocurrents were measured on CuIn(S,Se)2 solar cell devices, in the range of 330-1300 nm. Below 450 nm wavelength excitations, charge recombination in CdS/ZnO layers is determined to be responsible for longer decays and lower EQE. Femtosecond pump-probe measurements also support the charge transfer and recombination in CdS/ZnO layers. These measurements will be helpful to design high efficiency CISSe solar cells, by selecting suitable buffer layers.

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