TY - GEN
T1 - Physical and electrical characterization of junction between Single-Layer Graphene (SLG) and Ti prepared by various processes
AU - Liu, W. J.
AU - Yu, H. Y.
AU - Tay, B. K.
AU - Xu, S. H.
AU - Wang, Y. Y.
AU - Hu, H. L.
AU - Shen, Z. X.
AU - Wei, J.
AU - Li, M. F.
PY - 2010
Y1 - 2010
N2 - The junction contact characteristics between single layer graphene (SLG) and Ti, where Ti is prepared by various deposition processes are investigated physically (via Raman) and electrically (via 2-point or 4-point probe measurement and residual resistance methods). For Ti deposited by electron beam evaporation (EBM) process, there are no noticeable Raman shift and weak D band in Ti junction with SLG. On the other hand, D band and Raman shift becomes visible when Ti is prepared using sputter process, indicating the disorder related defects and the change of lattice constant in graphene. On the electrical property, it is observed that the contact resistance of Ti/graphene prepared by sputter process is larger than that by EBM process, which can be attributed to process induced defect in graphene.
AB - The junction contact characteristics between single layer graphene (SLG) and Ti, where Ti is prepared by various deposition processes are investigated physically (via Raman) and electrically (via 2-point or 4-point probe measurement and residual resistance methods). For Ti deposited by electron beam evaporation (EBM) process, there are no noticeable Raman shift and weak D band in Ti junction with SLG. On the other hand, D band and Raman shift becomes visible when Ti is prepared using sputter process, indicating the disorder related defects and the change of lattice constant in graphene. On the electrical property, it is observed that the contact resistance of Ti/graphene prepared by sputter process is larger than that by EBM process, which can be attributed to process induced defect in graphene.
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U2 - 10.1109/IWJT.2010.5475005
DO - 10.1109/IWJT.2010.5475005
M3 - Conference contribution
AN - SCOPUS:77954305967
SN - 9781424458691
T3 - IWJT-2010: Extended Abstracts - 2010 International Workshop on Junction Technology
SP - 236
EP - 238
BT - IWJT-2010
T2 - 10th International Workshop on Junction Technology, IWJT-2010
Y2 - 10 May 2010 through 11 May 2010
ER -