Physical and electrical properties of single Zn2 Sn O 4 nanowires

K. R.G. Karthik; B. P. Andreasson; C. Sun; S. S. Pramana; B. Varghese; C. H. Sow; N. Mathews; L. H. Wong; S. G. Mhaisalkar

doi:10.1149/1.3505875

Physical and electrical properties of single Zn₂ Sn O ₄ nanowires

K. R.G. Karthik, B. P. Andreasson, C. Sun, S. S. Pramana, B. Varghese, C. H. Sow, N. Mathews, L. H. Wong, S. G. Mhaisalkar

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

Electrical characterizations of single Zn₂ Sn O₄ (ZTO) nanowire devices are presented. These include resistivity, mobility, and photosensing measurements. The resistivity and the mobility of the Zn ₂ Sn O₄ nanowire were measured to be 5.6 cm and 0.2 cm²/Vs, respectively. These values were found to be strongly dependent on the amount of electron-donating defects and less dependent on the thickness of the nanowires. An increase in the resistivity when changing the ambient atmosphere is observed. This change is caused by defect states lying in the bandgap, as shown by photoluminescence. The results imply the potential of ZTO nanowires as phototransistors and other photosensitive devices.

Original language	English
Pages (from-to)	K5-K7
Journal	Electrochemical and Solid-State Letters
Volume	14
Issue number	1
DOIs	https://doi.org/10.1149/1.3505875
Publication status	Published - 2011
Externally published	Yes

ASJC Scopus Subject Areas

General Chemical Engineering
General Materials Science
Physical and Theoretical Chemistry
Electrochemistry
Electrical and Electronic Engineering

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title = "Physical and electrical properties of single Zn2 Sn O 4 nanowires",

abstract = "Electrical characterizations of single Zn2 Sn O4 (ZTO) nanowire devices are presented. These include resistivity, mobility, and photosensing measurements. The resistivity and the mobility of the Zn 2 Sn O4 nanowire were measured to be 5.6 cm and 0.2 cm2/Vs, respectively. These values were found to be strongly dependent on the amount of electron-donating defects and less dependent on the thickness of the nanowires. An increase in the resistivity when changing the ambient atmosphere is observed. This change is caused by defect states lying in the bandgap, as shown by photoluminescence. The results imply the potential of ZTO nanowires as phototransistors and other photosensitive devices.",

author = "Karthik, {K. R.G.} and Andreasson, {B. P.} and C. Sun and Pramana, {S. S.} and B. Varghese and Sow, {C. H.} and N. Mathews and Wong, {L. H.} and Mhaisalkar, {S. G.}",

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T1 - Physical and electrical properties of single Zn2 Sn O 4 nanowires

AU - Karthik, K. R.G.

AU - Andreasson, B. P.

AU - Sun, C.

AU - Pramana, S. S.

AU - Varghese, B.

AU - Sow, C. H.

AU - Mathews, N.

AU - Wong, L. H.

AU - Mhaisalkar, S. G.

PY - 2011

Y1 - 2011

N2 - Electrical characterizations of single Zn2 Sn O4 (ZTO) nanowire devices are presented. These include resistivity, mobility, and photosensing measurements. The resistivity and the mobility of the Zn 2 Sn O4 nanowire were measured to be 5.6 cm and 0.2 cm2/Vs, respectively. These values were found to be strongly dependent on the amount of electron-donating defects and less dependent on the thickness of the nanowires. An increase in the resistivity when changing the ambient atmosphere is observed. This change is caused by defect states lying in the bandgap, as shown by photoluminescence. The results imply the potential of ZTO nanowires as phototransistors and other photosensitive devices.

AB - Electrical characterizations of single Zn2 Sn O4 (ZTO) nanowire devices are presented. These include resistivity, mobility, and photosensing measurements. The resistivity and the mobility of the Zn 2 Sn O4 nanowire were measured to be 5.6 cm and 0.2 cm2/Vs, respectively. These values were found to be strongly dependent on the amount of electron-donating defects and less dependent on the thickness of the nanowires. An increase in the resistivity when changing the ambient atmosphere is observed. This change is caused by defect states lying in the bandgap, as shown by photoluminescence. The results imply the potential of ZTO nanowires as phototransistors and other photosensitive devices.

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Physical and electrical properties of single Zn₂ Sn O ₄ nanowires

Abstract

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