Physically Transient Resistive Switching Memory Based on Silk Protein

Hong Wang; Bowen Zhu; Xiaohua Ma; Yue Hao; Xiaodong Chen

doi:10.1002/smll.201502906

Physically Transient Resistive Switching Memory Based on Silk Protein

Hong Wang, Bowen Zhu, Xiaohua Ma, Yue Hao^*, Xiaodong Chen

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

160 Citations (Scopus)

Abstract

Physically transient resistive switching devices based on silk protein are successfully demonstrated. The devices can be absolutely dissolved in deionized water or in phosphate-buffered saline in 2 h. At the same time, a reasonable resistance OFF/ON ratio of larger than 10² and a retention time of more than 10⁴ s are achieved for nonvolatile memory applications.

Original language	English
Pages (from-to)	2715-2719
Number of pages	5
Journal	Small
Volume	12
Issue number	20
DOIs	https://doi.org/10.1002/smll.201502906
Publication status	Published - May 25 2016
Externally published	Yes

Bibliographical note

Publisher Copyright:
© 2016 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

ASJC Scopus Subject Areas

Biotechnology
General Chemistry
Biomaterials
General Materials Science
Engineering (miscellaneous)

Keywords

memory
proteins
resistive switching
transient electronics

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10.1002/smll.201502906

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abstract = "Physically transient resistive switching devices based on silk protein are successfully demonstrated. The devices can be absolutely dissolved in deionized water or in phosphate-buffered saline in 2 h. At the same time, a reasonable resistance OFF/ON ratio of larger than 102 and a retention time of more than 104 s are achieved for nonvolatile memory applications.",

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AU - Zhu, Bowen

AU - Ma, Xiaohua

AU - Hao, Yue

AU - Chen, Xiaodong

PY - 2016/5/25

Y1 - 2016/5/25

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AB - Physically transient resistive switching devices based on silk protein are successfully demonstrated. The devices can be absolutely dissolved in deionized water or in phosphate-buffered saline in 2 h. At the same time, a reasonable resistance OFF/ON ratio of larger than 102 and a retention time of more than 104 s are achieved for nonvolatile memory applications.

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KW - proteins

KW - resistive switching

KW - transient electronics

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Physically Transient Resistive Switching Memory Based on Silk Protein

Abstract

Bibliographical note

ASJC Scopus Subject Areas

Keywords

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