Plasma surface modification and gas sensing properties of SnO2 thin films prepared by plasma enhanced chemical vapor deposition

O. K. Tan; H. Huang; Y. C. Lee; M. S. Tse; J. Guo; T. White

doi:10.1109/ICSENS.2005.1597916

Plasma surface modification and gas sensing properties of SnO₂ thin films prepared by plasma enhanced chemical vapor deposition

O. K. Tan^*, H. Huang, Y. C. Lee, M. S. Tse, J. Guo, T. White

^*Corresponding author for this work

Nanyang Technological University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

SnO₂ thin films were deposited by RF inductively coupled plasma enhanced chemical vapor deposition (PECVD) using dibutyltin diacetate as the precursor. The as-deposited SnO₂ thin films were granular with a grain size of 20 nm. The as-deposited thin films were post-treated in the plasma to modify the films surface morphologies. After plasma treatment, uniform nanorods in the size of Φ7×200 nm were observed in the plasma-treated SnO₂ thin films. The gas sensing properties of the as-deposited and plasma-treated SnO₂ thin films were comparatively studied. The plasma-treated sample with nanorods showed much higher sensitivity, faster response and shorter recovery time compared to the as-deposited sample with nanograins. The tremendous improvement of the gas sensing properties of the plasma-treated sample was believed to be attributed to the intrinsically small grain size comparable to the space-charge length and high surface-to-volume ratios associated with the nanorods.

Original language	English
Title of host publication	Proceedings of the Fourth IEEE Conference on Sensors 2005
Pages	1181-1183
Number of pages	3
DOIs	https://doi.org/10.1109/ICSENS.2005.1597916
Publication status	Published - 2005
Externally published	Yes
Event	Fourth IEEE Conference on Sensors 2005 - Irvine, CA, United States Duration: Oct 31 2005 → Nov 3 2005

Publication series

Name	Proceedings of IEEE Sensors
Volume	2005

Conference

Conference	Fourth IEEE Conference on Sensors 2005
Country/Territory	United States
City	Irvine, CA
Period	10/31/05 → 11/3/05

ASJC Scopus Subject Areas

Electrical and Electronic Engineering

Access to Document

10.1109/ICSENS.2005.1597916

Cite this

Tan, O. K., Huang, H., Lee, Y. C., Tse, M. S., Guo, J., & White, T. (2005). Plasma surface modification and gas sensing properties of SnO₂ thin films prepared by plasma enhanced chemical vapor deposition. In Proceedings of the Fourth IEEE Conference on Sensors 2005 (pp. 1181-1183). Article 1597916 (Proceedings of IEEE Sensors; Vol. 2005). https://doi.org/10.1109/ICSENS.2005.1597916

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title = "Plasma surface modification and gas sensing properties of SnO2 thin films prepared by plasma enhanced chemical vapor deposition",

abstract = "SnO2 thin films were deposited by RF inductively coupled plasma enhanced chemical vapor deposition (PECVD) using dibutyltin diacetate as the precursor. The as-deposited SnO2 thin films were granular with a grain size of 20 nm. The as-deposited thin films were post-treated in the plasma to modify the films surface morphologies. After plasma treatment, uniform nanorods in the size of Φ7×200 nm were observed in the plasma-treated SnO2 thin films. The gas sensing properties of the as-deposited and plasma-treated SnO2 thin films were comparatively studied. The plasma-treated sample with nanorods showed much higher sensitivity, faster response and shorter recovery time compared to the as-deposited sample with nanograins. The tremendous improvement of the gas sensing properties of the plasma-treated sample was believed to be attributed to the intrinsically small grain size comparable to the space-charge length and high surface-to-volume ratios associated with the nanorods.",

author = "Tan, {O. K.} and H. Huang and Lee, {Y. C.} and Tse, {M. S.} and J. Guo and T. White",

year = "2005",

doi = "10.1109/ICSENS.2005.1597916",

language = "English",

isbn = "0780390563",

series = "Proceedings of IEEE Sensors",

pages = "1181--1183",

booktitle = "Proceedings of the Fourth IEEE Conference on Sensors 2005",

note = "Fourth IEEE Conference on Sensors 2005 ; Conference date: 31-10-2005 Through 03-11-2005",

}

Tan, OK, Huang, H, Lee, YC, Tse, MS, Guo, J & White, T 2005, Plasma surface modification and gas sensing properties of SnO₂ thin films prepared by plasma enhanced chemical vapor deposition. in Proceedings of the Fourth IEEE Conference on Sensors 2005., 1597916, Proceedings of IEEE Sensors, vol. 2005, pp. 1181-1183, Fourth IEEE Conference on Sensors 2005, Irvine, CA, United States, 10/31/05. https://doi.org/10.1109/ICSENS.2005.1597916

Plasma surface modification and gas sensing properties of SnO₂ thin films prepared by plasma enhanced chemical vapor deposition. / Tan, O. K.; Huang, H.; Lee, Y. C. et al.
Proceedings of the Fourth IEEE Conference on Sensors 2005. 2005. p. 1181-1183 1597916 (Proceedings of IEEE Sensors; Vol. 2005).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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AU - Huang, H.

AU - Lee, Y. C.

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AU - Guo, J.

AU - White, T.

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N2 - SnO2 thin films were deposited by RF inductively coupled plasma enhanced chemical vapor deposition (PECVD) using dibutyltin diacetate as the precursor. The as-deposited SnO2 thin films were granular with a grain size of 20 nm. The as-deposited thin films were post-treated in the plasma to modify the films surface morphologies. After plasma treatment, uniform nanorods in the size of Φ7×200 nm were observed in the plasma-treated SnO2 thin films. The gas sensing properties of the as-deposited and plasma-treated SnO2 thin films were comparatively studied. The plasma-treated sample with nanorods showed much higher sensitivity, faster response and shorter recovery time compared to the as-deposited sample with nanograins. The tremendous improvement of the gas sensing properties of the plasma-treated sample was believed to be attributed to the intrinsically small grain size comparable to the space-charge length and high surface-to-volume ratios associated with the nanorods.

AB - SnO2 thin films were deposited by RF inductively coupled plasma enhanced chemical vapor deposition (PECVD) using dibutyltin diacetate as the precursor. The as-deposited SnO2 thin films were granular with a grain size of 20 nm. The as-deposited thin films were post-treated in the plasma to modify the films surface morphologies. After plasma treatment, uniform nanorods in the size of Φ7×200 nm were observed in the plasma-treated SnO2 thin films. The gas sensing properties of the as-deposited and plasma-treated SnO2 thin films were comparatively studied. The plasma-treated sample with nanorods showed much higher sensitivity, faster response and shorter recovery time compared to the as-deposited sample with nanograins. The tremendous improvement of the gas sensing properties of the plasma-treated sample was believed to be attributed to the intrinsically small grain size comparable to the space-charge length and high surface-to-volume ratios associated with the nanorods.

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