Preparation and characterization of Er-doped SiO2-TiO2-Al2O3 planar waveguides by sol-gel process for integrated optical amplifiers

Q. Xiang; Y. Zhou; Y. L. Lam; Y. C. Chan; C. H. Kam

Preparation and characterization of Er-doped SiO₂-TiO₂-Al₂O₃ planar waveguides by sol-gel process for integrated optical amplifiers

Q. Xiang^*, Y. Zhou, Y. L. Lam, Y. C. Chan, C. H. Kam

^*Corresponding author for this work

Nanyang Technological University

Research output: Contribution to journal › Conference article › peer-review

Abstract

Silica based planar waveguides co-doped with Er³⁺, TiO₂ and Al₂O₃ have been fabricated on SOS (silica on silicon) by a sol-gel process using multiple spin-coating and rapid thermal processing (RTP). Their characteristics, such as refractive index, thickness photoluminescence (PL), FTIR (Furior Transform infrared spectrum), XRD (X-ray diffraction), and surface roughness are investigated. The relatively strong PL emitted from planar waveguide has been got using the recipe of 93SiO₂: 7TiO₂: 10Al₂O₃: 0.5 Er₂O₃ (mole ratio). The presence of O₂ during annealing in RTP is indispensable for sol-gel waveguide to guide light. Both the average refractive index and thickness of multilayer film increase as the layer number increases.

Original language	English
Pages (from-to)	116-121
Number of pages	6
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	3622
Publication status	Published - 1999
Externally published	Yes
Event	Proceedings of the 1999 Rare-Earth-Doped Materials and Devices III - San Jose, CA, USA Duration: Jan 27 1999 → Jan 28 1999

ASJC Scopus Subject Areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

Cite this

@article{08f25cc37b634f8582f58f8a5186d28b,

title = "Preparation and characterization of Er-doped SiO2-TiO2-Al2O3 planar waveguides by sol-gel process for integrated optical amplifiers",

abstract = "Silica based planar waveguides co-doped with Er3+, TiO2 and Al2O3 have been fabricated on SOS (silica on silicon) by a sol-gel process using multiple spin-coating and rapid thermal processing (RTP). Their characteristics, such as refractive index, thickness photoluminescence (PL), FTIR (Furior Transform infrared spectrum), XRD (X-ray diffraction), and surface roughness are investigated. The relatively strong PL emitted from planar waveguide has been got using the recipe of 93SiO2: 7TiO2: 10Al2O3: 0.5 Er2O3 (mole ratio). The presence of O2 during annealing in RTP is indispensable for sol-gel waveguide to guide light. Both the average refractive index and thickness of multilayer film increase as the layer number increases.",

author = "Q. Xiang and Y. Zhou and Lam, {Y. L.} and Chan, {Y. C.} and Kam, {C. H.}",

year = "1999",

language = "English",

volume = "3622",

pages = "116--121",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

issn = "0277-786X",

publisher = "SPIE",

note = "Proceedings of the 1999 Rare-Earth-Doped Materials and Devices III ; Conference date: 27-01-1999 Through 28-01-1999",

}

TY - JOUR

T1 - Preparation and characterization of Er-doped SiO2-TiO2-Al2O3 planar waveguides by sol-gel process for integrated optical amplifiers

AU - Xiang, Q.

AU - Zhou, Y.

AU - Lam, Y. L.

AU - Chan, Y. C.

AU - Kam, C. H.

PY - 1999

Y1 - 1999

N2 - Silica based planar waveguides co-doped with Er3+, TiO2 and Al2O3 have been fabricated on SOS (silica on silicon) by a sol-gel process using multiple spin-coating and rapid thermal processing (RTP). Their characteristics, such as refractive index, thickness photoluminescence (PL), FTIR (Furior Transform infrared spectrum), XRD (X-ray diffraction), and surface roughness are investigated. The relatively strong PL emitted from planar waveguide has been got using the recipe of 93SiO2: 7TiO2: 10Al2O3: 0.5 Er2O3 (mole ratio). The presence of O2 during annealing in RTP is indispensable for sol-gel waveguide to guide light. Both the average refractive index and thickness of multilayer film increase as the layer number increases.

AB - Silica based planar waveguides co-doped with Er3+, TiO2 and Al2O3 have been fabricated on SOS (silica on silicon) by a sol-gel process using multiple spin-coating and rapid thermal processing (RTP). Their characteristics, such as refractive index, thickness photoluminescence (PL), FTIR (Furior Transform infrared spectrum), XRD (X-ray diffraction), and surface roughness are investigated. The relatively strong PL emitted from planar waveguide has been got using the recipe of 93SiO2: 7TiO2: 10Al2O3: 0.5 Er2O3 (mole ratio). The presence of O2 during annealing in RTP is indispensable for sol-gel waveguide to guide light. Both the average refractive index and thickness of multilayer film increase as the layer number increases.

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UR - http://www.scopus.com/inward/citedby.url?scp=0032683128&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0032683128

SN - 0277-786X

VL - 3622

SP - 116

EP - 121

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

T2 - Proceedings of the 1999 Rare-Earth-Doped Materials and Devices III

Y2 - 27 January 1999 through 28 January 1999

ER -

Preparation and characterization of Er-doped SiO2-TiO2-Al2O3 planar waveguides by sol-gel process for integrated optical amplifiers

Abstract

ASJC Scopus Subject Areas

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Cite this

Preparation and characterization of Er-doped SiO₂-TiO₂-Al₂O₃ planar waveguides by sol-gel process for integrated optical amplifiers