Preparation and characterization of nanocrystalline SnO2 thin films by PECVD

Hui Huang; O. K. Tan; Y. C. Lee; M. S. Tse

doi:10.1016/j.jcrysgro.2005.12.031

Preparation and characterization of nanocrystalline SnO₂ thin films by PECVD

Hui Huang^*, O. K. Tan, Y. C. Lee, M. S. Tse

^*Corresponding author for this work

Nanyang Technological University

Research output: Contribution to journal › Conference article › peer-review

27 Citations (Scopus)

Abstract

Nanocrystalline SnO₂ thin films were deposited by RF inductively coupled plasma enhanced chemical vapor deposition (PECVD) using dibutyltin diacetate as precursor. The effects of substrate-nozzle distance (D _sn), RF power and deposition time on the phase and morphologies of the SnO₂ thin films have been studied. The as-deposited SnO ₂ thin films were well crystallized even without additional substrate heating and post-annealing. The grain size and film thickness decreased continuously with the increase of D_sn and RF power while increased with increasing deposition time. The deposition parameters showed notable effects on the microstructure of the SnO₂ thin films, thus it was possible to optimize the microstructure of the SnO₂ thin films by adjusting deposition parameters to achieve high-performance SnO ₂-based thin film gas sensors.

Original language	English
Pages (from-to)	70-74
Number of pages	5
Journal	Journal of Crystal Growth
Volume	288
Issue number	1
DOIs	https://doi.org/10.1016/j.jcrysgro.2005.12.031
Publication status	Published - Feb 2 2006
Externally published	Yes
Event	International Conference on Materials for Advanced Technologies - Duration: Jul 4 2005 → Jul 8 2005

ASJC Scopus Subject Areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

Keywords

A3. Chemical vapor deposition processes
B1. Tin oxide

Access to Document

10.1016/j.jcrysgro.2005.12.031

Cite this

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title = "Preparation and characterization of nanocrystalline SnO2 thin films by PECVD",

abstract = "Nanocrystalline SnO2 thin films were deposited by RF inductively coupled plasma enhanced chemical vapor deposition (PECVD) using dibutyltin diacetate as precursor. The effects of substrate-nozzle distance (D sn), RF power and deposition time on the phase and morphologies of the SnO2 thin films have been studied. The as-deposited SnO 2 thin films were well crystallized even without additional substrate heating and post-annealing. The grain size and film thickness decreased continuously with the increase of Dsn and RF power while increased with increasing deposition time. The deposition parameters showed notable effects on the microstructure of the SnO2 thin films, thus it was possible to optimize the microstructure of the SnO2 thin films by adjusting deposition parameters to achieve high-performance SnO 2-based thin film gas sensors.",

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author = "Hui Huang and Tan, {O. K.} and Lee, {Y. C.} and Tse, {M. S.}",

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AU - Huang, Hui

AU - Tan, O. K.

AU - Lee, Y. C.

AU - Tse, M. S.

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N2 - Nanocrystalline SnO2 thin films were deposited by RF inductively coupled plasma enhanced chemical vapor deposition (PECVD) using dibutyltin diacetate as precursor. The effects of substrate-nozzle distance (D sn), RF power and deposition time on the phase and morphologies of the SnO2 thin films have been studied. The as-deposited SnO 2 thin films were well crystallized even without additional substrate heating and post-annealing. The grain size and film thickness decreased continuously with the increase of Dsn and RF power while increased with increasing deposition time. The deposition parameters showed notable effects on the microstructure of the SnO2 thin films, thus it was possible to optimize the microstructure of the SnO2 thin films by adjusting deposition parameters to achieve high-performance SnO 2-based thin film gas sensors.

AB - Nanocrystalline SnO2 thin films were deposited by RF inductively coupled plasma enhanced chemical vapor deposition (PECVD) using dibutyltin diacetate as precursor. The effects of substrate-nozzle distance (D sn), RF power and deposition time on the phase and morphologies of the SnO2 thin films have been studied. The as-deposited SnO 2 thin films were well crystallized even without additional substrate heating and post-annealing. The grain size and film thickness decreased continuously with the increase of Dsn and RF power while increased with increasing deposition time. The deposition parameters showed notable effects on the microstructure of the SnO2 thin films, thus it was possible to optimize the microstructure of the SnO2 thin films by adjusting deposition parameters to achieve high-performance SnO 2-based thin film gas sensors.

KW - A3. Chemical vapor deposition processes

KW - B1. Tin oxide

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