Probing the SiGe virtual substrate by high-resolution channeling contrast microscopy

H. L. Seng; T. Osipowicz; T. C. Sum; E. S. Tok; G. Breton; N. J. Woods; J. Zhang

doi:10.1063/1.1474597

Probing the SiGe virtual substrate by high-resolution channeling contrast microscopy

H. L. Seng, T. Osipowicz, T. C. Sum, E. S. Tok, G. Breton, N. J. Woods, J. Zhang

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

Relaxed, epitaxial SiGe layers with low densities of threading dislocations are grown by linearly grading the Ge composition. However, such compositionally graded SiGe layers (virtual substrates) often result in a cross hatch surface morphology which affects subsequent device processing. Here, we report on high-resolution channeling-contrast-microscopy (CCM) measurements on such virtual substrates grown by gas-source molecular-beam epitaxy and low-pressure chemical vapor deposition. A two-MeV He⁺ beam focused to a submicron spot is used in these CCM measurements to obtain both lateral and depth-resolved information on the cross hatch features observed and their association with a slight lattice tilt.

Original language	English
Pages (from-to)	2940-2942
Number of pages	3
Journal	Applied Physics Letters
Volume	80
Issue number	16
DOIs	https://doi.org/10.1063/1.1474597
Publication status	Published - Apr 22 2002
Externally published	Yes

ASJC Scopus Subject Areas

Physics and Astronomy (miscellaneous)

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abstract = "Relaxed, epitaxial SiGe layers with low densities of threading dislocations are grown by linearly grading the Ge composition. However, such compositionally graded SiGe layers (virtual substrates) often result in a cross hatch surface morphology which affects subsequent device processing. Here, we report on high-resolution channeling-contrast-microscopy (CCM) measurements on such virtual substrates grown by gas-source molecular-beam epitaxy and low-pressure chemical vapor deposition. A two-MeV He+ beam focused to a submicron spot is used in these CCM measurements to obtain both lateral and depth-resolved information on the cross hatch features observed and their association with a slight lattice tilt.",

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AU - Osipowicz, T.

AU - Sum, T. C.

AU - Tok, E. S.

AU - Breton, G.

AU - Woods, N. J.

AU - Zhang, J.

PY - 2002/4/22

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N2 - Relaxed, epitaxial SiGe layers with low densities of threading dislocations are grown by linearly grading the Ge composition. However, such compositionally graded SiGe layers (virtual substrates) often result in a cross hatch surface morphology which affects subsequent device processing. Here, we report on high-resolution channeling-contrast-microscopy (CCM) measurements on such virtual substrates grown by gas-source molecular-beam epitaxy and low-pressure chemical vapor deposition. A two-MeV He+ beam focused to a submicron spot is used in these CCM measurements to obtain both lateral and depth-resolved information on the cross hatch features observed and their association with a slight lattice tilt.

AB - Relaxed, epitaxial SiGe layers with low densities of threading dislocations are grown by linearly grading the Ge composition. However, such compositionally graded SiGe layers (virtual substrates) often result in a cross hatch surface morphology which affects subsequent device processing. Here, we report on high-resolution channeling-contrast-microscopy (CCM) measurements on such virtual substrates grown by gas-source molecular-beam epitaxy and low-pressure chemical vapor deposition. A two-MeV He+ beam focused to a submicron spot is used in these CCM measurements to obtain both lateral and depth-resolved information on the cross hatch features observed and their association with a slight lattice tilt.

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Probing the SiGe virtual substrate by high-resolution channeling contrast microscopy

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