Pulsating gate bias in microfluidic liquid-gated field-effect transistor based on carbon nanotubes: Extending operating window, amplifying signal and improving detection to atto-molar level

I. Putu Mahendra Wijaya, Tey Ju Nie, Isabel Rodriguez*, Subodh G. Mhaisalkar

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The advent of carbon nanotube liquid-gated transistor (LGFET) for biosensing applications allows the possibility of real-time and label-free detection of biomolecular interactions. The use of an aqueous solution as dielectric, however, has traditionally restricted the operating gate bias (VG) within |VG| < 1 volt, due to the electrolysis of water. Here, we describe pulsed-gating as a practical method to extend the operation window of LGFETs to |VG| < 1 volt. When operating in the |VG| < 1 volt region, large IDS drops can be observed which allows for the amplification of the signal obtained from the LGFET and as a result, detection limits down to atto-molar level concentration can be achieved. This is an order of magnitude improvement over conventionally employed DC-VG biasing.

Original languageEnglish
Title of host publication14th International Conference on Miniaturized Systems for Chemistry and Life Sciences 2010, MicroTAS 2010
Pages118-120
Number of pages3
Publication statusPublished - 2010
Externally publishedYes
Event14th International Conference on Miniaturized Systems for Chemistry and Life Sciences 2010, MicroTAS 2010 - Groningen, Netherlands
Duration: Oct 3 2010Oct 7 2010

Publication series

Name14th International Conference on Miniaturized Systems for Chemistry and Life Sciences 2010, MicroTAS 2010
Volume1

Conference

Conference14th International Conference on Miniaturized Systems for Chemistry and Life Sciences 2010, MicroTAS 2010
Country/TerritoryNetherlands
CityGroningen
Period10/3/1010/7/10

ASJC Scopus Subject Areas

  • Control and Systems Engineering

Keywords

  • LGFET
  • Liquid-gated field-effect transistor
  • Pulsed gated bias

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