Pulsed laser ablation of preferentially orientated ZnO:Co diluted magnetic semiconducting thin films on Si substrates

Y. B. Zhang; Q. Liu; T. Sritharan; C. L. Gan; S. Li

doi:10.1063/1.2236286

Pulsed laser ablation of preferentially orientated ZnO:Co diluted magnetic semiconducting thin films on Si substrates

Y. B. Zhang^*, Q. Liu, T. Sritharan, C. L. Gan, S. Li

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

55 Citations (Scopus)

Abstract

ZnO:Co thin films with room-temperature ferromagnetism have been synthesized on (001) Si substrates by pulsed laser deposition using a Zn _0.95Co_0.05O ceramic target. Single-phase wurtzite thin films with (002) preferential orientation were grown at 450°C in vacuum. There is no indication of Co nanocluster formation. However, copious edge dislocations appear to have formed during the film growth. A saturation magnetization of 1.04 μ_B/CO and a coercivity of 25 Oe were obtained at room temperature. In addition to O vacancies, the Zn interstitial induced by edge dislocations may also contribute to the ferromagnetic properties in this oxide-diluted magnetic semiconductor.

Original language	English
Article number	042510
Journal	Applied Physics Letters
Volume	89
Issue number	4
DOIs	https://doi.org/10.1063/1.2236286
Publication status	Published - 2006
Externally published	Yes

ASJC Scopus Subject Areas

Physics and Astronomy (miscellaneous)

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10.1063/1.2236286

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title = "Pulsed laser ablation of preferentially orientated ZnO:Co diluted magnetic semiconducting thin films on Si substrates",

abstract = "ZnO:Co thin films with room-temperature ferromagnetism have been synthesized on (001) Si substrates by pulsed laser deposition using a Zn 0.95Co0.05O ceramic target. Single-phase wurtzite thin films with (002) preferential orientation were grown at 450°C in vacuum. There is no indication of Co nanocluster formation. However, copious edge dislocations appear to have formed during the film growth. A saturation magnetization of 1.04 μB/CO and a coercivity of 25 Oe were obtained at room temperature. In addition to O vacancies, the Zn interstitial induced by edge dislocations may also contribute to the ferromagnetic properties in this oxide-diluted magnetic semiconductor.",

author = "Zhang, \{Y. B.\} and Q. Liu and T. Sritharan and Gan, \{C. L.\} and S. Li",

year = "2006",

doi = "10.1063/1.2236286",

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journal = "Applied Physics Letters",

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T1 - Pulsed laser ablation of preferentially orientated ZnO:Co diluted magnetic semiconducting thin films on Si substrates

AU - Zhang, Y. B.

AU - Liu, Q.

AU - Sritharan, T.

AU - Gan, C. L.

AU - Li, S.

PY - 2006

Y1 - 2006

N2 - ZnO:Co thin films with room-temperature ferromagnetism have been synthesized on (001) Si substrates by pulsed laser deposition using a Zn 0.95Co0.05O ceramic target. Single-phase wurtzite thin films with (002) preferential orientation were grown at 450°C in vacuum. There is no indication of Co nanocluster formation. However, copious edge dislocations appear to have formed during the film growth. A saturation magnetization of 1.04 μB/CO and a coercivity of 25 Oe were obtained at room temperature. In addition to O vacancies, the Zn interstitial induced by edge dislocations may also contribute to the ferromagnetic properties in this oxide-diluted magnetic semiconductor.

AB - ZnO:Co thin films with room-temperature ferromagnetism have been synthesized on (001) Si substrates by pulsed laser deposition using a Zn 0.95Co0.05O ceramic target. Single-phase wurtzite thin films with (002) preferential orientation were grown at 450°C in vacuum. There is no indication of Co nanocluster formation. However, copious edge dislocations appear to have formed during the film growth. A saturation magnetization of 1.04 μB/CO and a coercivity of 25 Oe were obtained at room temperature. In addition to O vacancies, the Zn interstitial induced by edge dislocations may also contribute to the ferromagnetic properties in this oxide-diluted magnetic semiconductor.

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M1 - 042510

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Pulsed laser ablation of preferentially orientated ZnO:Co diluted magnetic semiconducting thin films on Si substrates

Abstract

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