Abstract
This chapter reviews and summarizes recent advances in laser-induced formation of ultrashallow p+-doped junctions and silicide using single- and multiple-pulsed laser annealing. Pulsed laser annealing is a transient annealing which facilitates very fast melting, mixing, and quenching. It can be used to control dopant diffusion by induced melt depth. Therefore an extremely high degree of dopant activation and defect annealing are achieved upon recrystallization. It is also possible to tailor the composition, structural, and interface characteristics of the resultant silicide layer by varying the laser fluence and number of pulses, which makes it versatile for applications.
| Original language | English |
|---|---|
| Title of host publication | Advances in Laser Materials Processing |
| Subtitle of host publication | Technology, Research and Applications |
| Publisher | Elsevier |
| Pages | 299-337 |
| Number of pages | 39 |
| ISBN (Electronic) | 9780081012529 |
| ISBN (Print) | 9780081012536 |
| DOIs | |
| Publication status | Published - Jan 1 2017 |
| Externally published | Yes |
Bibliographical note
Publisher Copyright:© 2018 Elsevier Ltd. All rights reserved.
ASJC Scopus Subject Areas
- General Engineering
- General Materials Science
Keywords
- Complementary metal-oxide-silicon
- Dopant activation
- Excimer laser
- Pulsed laser annealing
- Silicide
- Ultrashallow junction