Abstract
This chapter reviews and summarizes recent advances in laser induced formation of ultrashallow p+-doped junctions and silicide using single- and multiple-pulsed laser annealing. Pulsed laser annealing is a transient annealing which facilitates very fast melting, mixing and quenching. It can be used to control dopant diffusion by induced melt depth, thus an extremely high degree of dopant activation and defect annealing are achieved upon recrystallization. It is also possible to tailor the composition, structural and interface characteristics of the resultant silicide layer by varying the laser fluence and number of pulses, which makes it versatile for applications.
| Original language | English |
|---|---|
| Title of host publication | Advances in Laser Materials Processing |
| Subtitle of host publication | Technology, Research and Application |
| Publisher | Elsevier Inc. |
| Pages | 327-364 |
| Number of pages | 38 |
| ISBN (Print) | 9781845694746 |
| DOIs | |
| Publication status | Published - Jul 2010 |
| Externally published | Yes |
ASJC Scopus Subject Areas
- General Engineering
Keywords
- Complementary metal-oxide-silicon
- Dopant activation
- Excimer laser
- Pulsed laser annealing
- Silicide
- Ultrashallow junction