Pulsed-laser-induced quantum well intermixing in GaInAs/GaInAsP laser structures

T. K. Ong; B. S. Ooi; Y. L. Lam; Y. C. Chan; Y. Zhou

Pulsed-laser-induced quantum well intermixing in GaInAs/GaInAsP laser structures

T. K. Ong^*, B. S. Ooi, Y. L. Lam, Y. C. Chan, Y. Zhou

^*Corresponding author for this work

Nanyang Technological University

Research output: Contribution to conference › Paper › peer-review

Abstract

A significant modification of the bandgap energy of GaInAs/GaInAsP laser structure was performed using pulsed-laser-induced disordering (PLID) technique. A Q-switched Nd:YAG laser with wavelength of 1.064 μm generated pulses of 8 ns and pulse repetition rate of 10 Hz was used. The effect of laser processing on the material structure was investigated using photoluminescence measurements and transmission electron microscopy.

Original language	English
Pages	235
Number of pages	1
Publication status	Published - 2000
Externally published	Yes
Event	2000 Confernce on Lasers and Electro-Optics Europe (CLEO 2000) - Nice, France Duration: Sept 10 2000 → Sept 15 2000

Conference

Conference	2000 Confernce on Lasers and Electro-Optics Europe (CLEO 2000)
City	Nice, France
Period	9/10/00 → 9/15/00

ASJC Scopus Subject Areas

Control and Systems Engineering
Electrical and Electronic Engineering

Cite this

@conference{5e54a8b60b7e46ef83f2054209a91a76,

title = "Pulsed-laser-induced quantum well intermixing in GaInAs/GaInAsP laser structures",

abstract = "A significant modification of the bandgap energy of GaInAs/GaInAsP laser structure was performed using pulsed-laser-induced disordering (PLID) technique. A Q-switched Nd:YAG laser with wavelength of 1.064 μm generated pulses of 8 ns and pulse repetition rate of 10 Hz was used. The effect of laser processing on the material structure was investigated using photoluminescence measurements and transmission electron microscopy.",

author = "Ong, {T. K.} and Ooi, {B. S.} and Lam, {Y. L.} and Chan, {Y. C.} and Y. Zhou",

year = "2000",

language = "English",

pages = "235",

note = "2000 Confernce on Lasers and Electro-Optics Europe (CLEO 2000) ; Conference date: 10-09-2000 Through 15-09-2000",

}

TY - CONF

T1 - Pulsed-laser-induced quantum well intermixing in GaInAs/GaInAsP laser structures

AU - Ong, T. K.

AU - Ooi, B. S.

AU - Lam, Y. L.

AU - Chan, Y. C.

AU - Zhou, Y.

PY - 2000

Y1 - 2000

N2 - A significant modification of the bandgap energy of GaInAs/GaInAsP laser structure was performed using pulsed-laser-induced disordering (PLID) technique. A Q-switched Nd:YAG laser with wavelength of 1.064 μm generated pulses of 8 ns and pulse repetition rate of 10 Hz was used. The effect of laser processing on the material structure was investigated using photoluminescence measurements and transmission electron microscopy.

AB - A significant modification of the bandgap energy of GaInAs/GaInAsP laser structure was performed using pulsed-laser-induced disordering (PLID) technique. A Q-switched Nd:YAG laser with wavelength of 1.064 μm generated pulses of 8 ns and pulse repetition rate of 10 Hz was used. The effect of laser processing on the material structure was investigated using photoluminescence measurements and transmission electron microscopy.

UR - http://www.scopus.com/inward/record.url?scp=0033697712&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0033697712&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:0033697712

SP - 235

T2 - 2000 Confernce on Lasers and Electro-Optics Europe (CLEO 2000)

Y2 - 10 September 2000 through 15 September 2000

ER -

Pulsed-laser-induced quantum well intermixing in GaInAs/GaInAsP laser structures

Abstract

Conference

ASJC Scopus Subject Areas

Other files and links

Cite this