Pulsed laser-induced silicidation on TiN-capped CoSi bilayers

F. L. Chow; P. S. Lee; K. L. Pey; L. J. Tang; C. H. Tung; X. C. Wang; G. C. Lim

doi:10.1063/1.2171774

Pulsed laser-induced silicidation on TiN-capped CoSi bilayers

F. L. Chow^*, P. S. Lee, K. L. Pey, L. J. Tang, C. H. Tung, X. C. Wang, G. C. Lim

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

This paper studies the effects of pulsed laser-induced annealing of TiN-capped CoSi bilayers with and without preamorphized Si substrate. For a low fluence of 0.2 J cm2, nonstoichiometry Co silicide with triple-layered structure is formed. On the other hand, highly textured Co Si2 grains in (111) direction are formed for a high fluence of 0.7 J cm2. The highly textured Co Si2 layer is monocrystalline and fully coherent with the (111) plane of the Si substrate. However, it has a large amount of microstructural defects throughout the layer. Competitive growth mechanisms between crystallization of homogenous intermixed layer and the nucleation from the melt boundary are discussed.

Original language	English
Journal	Journal of Applied Physics
Volume	99
Issue number	4
DOIs	https://doi.org/10.1063/1.2171774
Publication status	Published - Feb 15 2006
Externally published	Yes

ASJC Scopus Subject Areas

General Physics and Astronomy

Access to Document

10.1063/1.2171774

Cite this

@article{0364127f3a4244e48b9fc2faf526a7cc,

title = "Pulsed laser-induced silicidation on TiN-capped CoSi bilayers",

abstract = "This paper studies the effects of pulsed laser-induced annealing of TiN-capped CoSi bilayers with and without preamorphized Si substrate. For a low fluence of 0.2 J cm2, nonstoichiometry Co silicide with triple-layered structure is formed. On the other hand, highly textured Co Si2 grains in (111) direction are formed for a high fluence of 0.7 J cm2. The highly textured Co Si2 layer is monocrystalline and fully coherent with the (111) plane of the Si substrate. However, it has a large amount of microstructural defects throughout the layer. Competitive growth mechanisms between crystallization of homogenous intermixed layer and the nucleation from the melt boundary are discussed.",

author = "Chow, \{F. L.\} and Lee, \{P. S.\} and Pey, \{K. L.\} and Tang, \{L. J.\} and Tung, \{C. H.\} and Wang, \{X. C.\} and Lim, \{G. C.\}",

year = "2006",

month = feb,

day = "15",

doi = "10.1063/1.2171774",

language = "English",

volume = "99",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics Publising LLC",

number = "4",

}

TY - JOUR

T1 - Pulsed laser-induced silicidation on TiN-capped CoSi bilayers

AU - Chow, F. L.

AU - Lee, P. S.

AU - Pey, K. L.

AU - Tang, L. J.

AU - Tung, C. H.

AU - Wang, X. C.

AU - Lim, G. C.

PY - 2006/2/15

Y1 - 2006/2/15

N2 - This paper studies the effects of pulsed laser-induced annealing of TiN-capped CoSi bilayers with and without preamorphized Si substrate. For a low fluence of 0.2 J cm2, nonstoichiometry Co silicide with triple-layered structure is formed. On the other hand, highly textured Co Si2 grains in (111) direction are formed for a high fluence of 0.7 J cm2. The highly textured Co Si2 layer is monocrystalline and fully coherent with the (111) plane of the Si substrate. However, it has a large amount of microstructural defects throughout the layer. Competitive growth mechanisms between crystallization of homogenous intermixed layer and the nucleation from the melt boundary are discussed.

AB - This paper studies the effects of pulsed laser-induced annealing of TiN-capped CoSi bilayers with and without preamorphized Si substrate. For a low fluence of 0.2 J cm2, nonstoichiometry Co silicide with triple-layered structure is formed. On the other hand, highly textured Co Si2 grains in (111) direction are formed for a high fluence of 0.7 J cm2. The highly textured Co Si2 layer is monocrystalline and fully coherent with the (111) plane of the Si substrate. However, it has a large amount of microstructural defects throughout the layer. Competitive growth mechanisms between crystallization of homogenous intermixed layer and the nucleation from the melt boundary are discussed.

UR - http://www.scopus.com/inward/record.url?scp=33644589389&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33644589389&partnerID=8YFLogxK

U2 - 10.1063/1.2171774

DO - 10.1063/1.2171774

M3 - Article

AN - SCOPUS:33644589389

SN - 0021-8979

VL - 99

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 4

ER -

Pulsed laser-induced silicidation on TiN-capped CoSi bilayers

Abstract

ASJC Scopus Subject Areas

Access to Document

Other files and links

Fingerprint

Cite this