Pyramidal structural defects in erbium silicide thin films

Eu Jin Tan; Mathieu Bouville; Dong Zhi Chi; Kin Leong Pey; Pooi See Lee; David J. Srolovitz; Chih Hang Tung

doi:10.1063/1.2162862

Pyramidal structural defects in erbium silicide thin films

Eu Jin Tan, Mathieu Bouville, Dong Zhi Chi^*, Kin Leong Pey, Pooi See Lee, David J. Srolovitz, Chih Hang Tung

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

20 Citations (Scopus)

Abstract

Pyramidal structural defects, 5-8 μm wide, have been discovered in thin films of epitaxial Er Si2-x formed by annealing thin Er films on Si(001) substrates at temperatures of 500-800 °C. The formation of these defects is not due to oxidation. We propose that they form as a result of the separation of the silicide film from the substrate and its buckling in order to relieve the compressive, biaxial epitaxial stresses. Silicon can then diffuse through the silicide or along the interface to fully or partially fill the void between the buckled erbium disilicide film and the substrate.

Original language	English
Article number	021908
Pages (from-to)	1-3
Number of pages	3
Journal	Applied Physics Letters
Volume	88
Issue number	2
DOIs	https://doi.org/10.1063/1.2162862
Publication status	Published - 2006
Externally published	Yes

ASJC Scopus Subject Areas

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.2162862

Cite this

@article{028d44550e9e49789bda34ead35a2f3e,

title = "Pyramidal structural defects in erbium silicide thin films",

abstract = "Pyramidal structural defects, 5-8 μm wide, have been discovered in thin films of epitaxial Er Si2-x formed by annealing thin Er films on Si(001) substrates at temperatures of 500-800 °C. The formation of these defects is not due to oxidation. We propose that they form as a result of the separation of the silicide film from the substrate and its buckling in order to relieve the compressive, biaxial epitaxial stresses. Silicon can then diffuse through the silicide or along the interface to fully or partially fill the void between the buckled erbium disilicide film and the substrate.",

author = "Tan, {Eu Jin} and Mathieu Bouville and Chi, {Dong Zhi} and Pey, {Kin Leong} and Lee, {Pooi See} and Srolovitz, {David J.} and Tung, {Chih Hang}",

year = "2006",

doi = "10.1063/1.2162862",

language = "English",

volume = "88",

pages = "1--3",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "2",

}

TY - JOUR

T1 - Pyramidal structural defects in erbium silicide thin films

AU - Tan, Eu Jin

AU - Bouville, Mathieu

AU - Chi, Dong Zhi

AU - Pey, Kin Leong

AU - Lee, Pooi See

AU - Srolovitz, David J.

AU - Tung, Chih Hang

PY - 2006

Y1 - 2006

N2 - Pyramidal structural defects, 5-8 μm wide, have been discovered in thin films of epitaxial Er Si2-x formed by annealing thin Er films on Si(001) substrates at temperatures of 500-800 °C. The formation of these defects is not due to oxidation. We propose that they form as a result of the separation of the silicide film from the substrate and its buckling in order to relieve the compressive, biaxial epitaxial stresses. Silicon can then diffuse through the silicide or along the interface to fully or partially fill the void between the buckled erbium disilicide film and the substrate.

AB - Pyramidal structural defects, 5-8 μm wide, have been discovered in thin films of epitaxial Er Si2-x formed by annealing thin Er films on Si(001) substrates at temperatures of 500-800 °C. The formation of these defects is not due to oxidation. We propose that they form as a result of the separation of the silicide film from the substrate and its buckling in order to relieve the compressive, biaxial epitaxial stresses. Silicon can then diffuse through the silicide or along the interface to fully or partially fill the void between the buckled erbium disilicide film and the substrate.

UR - http://www.scopus.com/inward/record.url?scp=30744464082&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=30744464082&partnerID=8YFLogxK

U2 - 10.1063/1.2162862

DO - 10.1063/1.2162862

M3 - Article

AN - SCOPUS:30744464082

SN - 0003-6951

VL - 88

SP - 1

EP - 3

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 2

M1 - 021908

ER -

Pyramidal structural defects in erbium silicide thin films

Abstract

ASJC Scopus Subject Areas

Access to Document

Other files and links

Fingerprint

Cite this