TY - JOUR
T1 - Quantum dot decorated aligned carbon nanotube bundles for a performance enhanced photoswitch
AU - Sreejith, Sivaramapanicker
AU - Hansen, Reinack
AU - Joshi, Hrishikesh
AU - Kutty, R. Govindan
AU - Liu, Zheng
AU - Zheng, Lianxi
AU - Yang, Jinglei
AU - Zhao, Yanli
N1 - Publisher Copyright:
© The Royal Society of Chemistry 2016.
PY - 2016/4/28
Y1 - 2016/4/28
N2 - Photoactive materials that are triggered by the irradiation of light to generate an electrical response provide an ecofriendly platform to afford efficient power sources and switches. A chemical assembly of well-known elements with aligned carbon nanotube bundles is reported here, which was employed to form an efficient photo-induced charge transfer device. The primary elements of this device are ultra-long multi-walled carbon nanotube (MWCNT) bundles, polyaniline (PANI) thin film coating, and CdSe quantum dots (QDs). Highly ordered and horizontally aligned MWCNT bundles were coated with PANI to enhance charge transfer properties of active QDs in this platform. The obtained device (CdSe-MWCNT@PANI) constructed on a silicon base exhibits highly efficient power conversion capabilities owing to the aligned MWCNT bundle assisted enhanced charge transport pathways generated within the device. The device also shows a short circuit current density (Jsc) of 9.81 mA cm-2 and an open circuit voltage (Voc) of 0.46 V. The power conversion efficiency (PCE) of the device is 5.41%, and the current response is quite stable, highly responsive, and reproducible.
AB - Photoactive materials that are triggered by the irradiation of light to generate an electrical response provide an ecofriendly platform to afford efficient power sources and switches. A chemical assembly of well-known elements with aligned carbon nanotube bundles is reported here, which was employed to form an efficient photo-induced charge transfer device. The primary elements of this device are ultra-long multi-walled carbon nanotube (MWCNT) bundles, polyaniline (PANI) thin film coating, and CdSe quantum dots (QDs). Highly ordered and horizontally aligned MWCNT bundles were coated with PANI to enhance charge transfer properties of active QDs in this platform. The obtained device (CdSe-MWCNT@PANI) constructed on a silicon base exhibits highly efficient power conversion capabilities owing to the aligned MWCNT bundle assisted enhanced charge transport pathways generated within the device. The device also shows a short circuit current density (Jsc) of 9.81 mA cm-2 and an open circuit voltage (Voc) of 0.46 V. The power conversion efficiency (PCE) of the device is 5.41%, and the current response is quite stable, highly responsive, and reproducible.
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U2 - 10.1039/c5nr07494k
DO - 10.1039/c5nr07494k
M3 - Article
AN - SCOPUS:84969612652
SN - 2040-3364
VL - 8
SP - 8547
EP - 8552
JO - Nanoscale
JF - Nanoscale
IS - 16
ER -