Regulating Vertical Domain Distribution in Ruddlesden-Popper Perovskites for Electroluminescence Devices

Natalia Yantara; Nur Fadilah Jamaludin; Benny Febriansyah; Annalisa Bruno; Yeow Boon Tay; Subodh Mhaisalkar; Nripan Mathews

doi:10.1021/acs.jpclett.9b03057

Regulating Vertical Domain Distribution in Ruddlesden-Popper Perovskites for Electroluminescence Devices

Natalia Yantara, Nur Fadilah Jamaludin, Benny Febriansyah, Annalisa Bruno, Yeow Boon Tay, Subodh Mhaisalkar, Nripan Mathews^*

^*Corresponding author for this work

Nanyang Technological University

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

Efficient perovskite light-emitting diodes are designed by employing an ordered vertical domain distribution in quasi-two-dimensional (quasi-2D) perovskites to induce better electron flow to the emitting domains. Dimethyl sulfoxide is added to the precursor solution to tune the crystallization rate and promote the formation of high-m domains near the substrate surface via the one-step deposition method. Optimized deposition conditions yielding a film with favorable energetic landscape for both carrier injection and confinement results in a 4-fold external quantum efficiency (EQE) enhancement with maximum EQE of 5.79%. Better carrier injection is further supported by a turn-on voltage value that is comparable to the band gap of the emitter material (∼2.25 eV).

Original language	English
Pages (from-to)	7949-7955
Number of pages	7
Journal	Journal of Physical Chemistry Letters
Volume	10
Issue number	24
DOIs	https://doi.org/10.1021/acs.jpclett.9b03057
Publication status	Published - Dec 19 2019
Externally published	Yes

Bibliographical note

Publisher Copyright:
© 2019 American Chemical Society.

ASJC Scopus Subject Areas

General Materials Science
Physical and Theoretical Chemistry

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10.1021/acs.jpclett.9b03057

Cite this

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title = "Regulating Vertical Domain Distribution in Ruddlesden-Popper Perovskites for Electroluminescence Devices",

abstract = "Efficient perovskite light-emitting diodes are designed by employing an ordered vertical domain distribution in quasi-two-dimensional (quasi-2D) perovskites to induce better electron flow to the emitting domains. Dimethyl sulfoxide is added to the precursor solution to tune the crystallization rate and promote the formation of high-m domains near the substrate surface via the one-step deposition method. Optimized deposition conditions yielding a film with favorable energetic landscape for both carrier injection and confinement results in a 4-fold external quantum efficiency (EQE) enhancement with maximum EQE of 5.79\%. Better carrier injection is further supported by a turn-on voltage value that is comparable to the band gap of the emitter material (∼2.25 eV).",

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AU - Yantara, Natalia

AU - Jamaludin, Nur Fadilah

AU - Febriansyah, Benny

AU - Bruno, Annalisa

AU - Tay, Yeow Boon

AU - Mhaisalkar, Subodh

AU - Mathews, Nripan

PY - 2019/12/19

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AB - Efficient perovskite light-emitting diodes are designed by employing an ordered vertical domain distribution in quasi-two-dimensional (quasi-2D) perovskites to induce better electron flow to the emitting domains. Dimethyl sulfoxide is added to the precursor solution to tune the crystallization rate and promote the formation of high-m domains near the substrate surface via the one-step deposition method. Optimized deposition conditions yielding a film with favorable energetic landscape for both carrier injection and confinement results in a 4-fold external quantum efficiency (EQE) enhancement with maximum EQE of 5.79%. Better carrier injection is further supported by a turn-on voltage value that is comparable to the band gap of the emitter material (∼2.25 eV).

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Regulating Vertical Domain Distribution in Ruddlesden-Popper Perovskites for Electroluminescence Devices

Abstract

Bibliographical note

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