Abstract
We report a p-type nickel oxide/n-type indium gallium zinc oxide (p-NiO/n-IGZO) thin film heterojunction structure for resistive switching memory application. The as-fabricated structure exhibits the normal p-n junction behaviors with good rectification characteristic. The structure is turned into a bipolar resistive switching memory by a forming process in which the p-n junction is reversely biased. The device shows good memory performances; and it has the capability of multibit storage, which can be realized by controlling the compliance current or reset stop voltage during the switching operation. The mechanisms for both the forming process and bipolar resistive switching are discussed; and the current conduction at the low-and high-resistance states are examined in terms of temperature dependence of the current-voltage characteristic of the structure.
| Original language | English |
|---|---|
| Pages (from-to) | Q239-Q243 |
| Journal | ECS Journal of Solid State Science and Technology |
| Volume | 5 |
| Issue number | 9 |
| DOIs | |
| Publication status | Published - 2016 |
| Externally published | Yes |
Bibliographical note
Publisher Copyright:© 2016 The Electrochemical Society.
ASJC Scopus Subject Areas
- Electronic, Optical and Magnetic Materials