Abstract
Ultrathin TiO2 is deposited on conventional hydrothermal grown hematite nanorod arrays by atomic layer deposition (ALD). Significant photoelectrochemical water oxidation performance improvement is observed when the ALD TiO2-treated samples are annealed at 650 °C or higher temperatures. The electrochemical impedance spectroscopy (EIS) study shows a surface trap-mediated charge transfer process exists at the hematite-electrolyte interface. Thus, one possible reason for the improvement could be the increased surface states at the hematite surface, which leads to better charge separation, less electron-hole recombination, and hence, greater improvement of photocurrent. Our Raman study shows the increase in surface defects on the ALD TiO2-coated hematite sample after being annealed at 650 °C or higher temperatures. A photocurrent of 1.9 mA cm-2 at 1.23 V (vs RHE) with a maximum of 2.5 mA cm-2 at 1.8 V (vs RHE) in 1 M NaOH under AM 1.5 simulated solar illumination is achieved in optimized deposition and annealing conditions.
Original language | English |
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Pages (from-to) | 16960-16966 |
Number of pages | 7 |
Journal | ACS Applied Materials and Interfaces |
Volume | 7 |
Issue number | 31 |
DOIs | |
Publication status | Published - Aug 12 2015 |
Externally published | Yes |
Bibliographical note
Publisher Copyright:© 2015 American Chemical Society.
ASJC Scopus Subject Areas
- General Materials Science
Keywords
- atomic layer deposition (ALD)
- hematite
- nanorods
- photoelectrochemical cells (PEC)
- surface treatment
- TiO