Role of metallic cobalt in room temperature dilute ferromagnetic semiconductor Zn0.95 Co0.05 O1-δ

Q. Liu; C. L. Gan; C. L. Yuan; G. C. Han

doi:10.1063/1.2835702

Role of metallic cobalt in room temperature dilute ferromagnetic semiconductor Zn0.95 Co0.05 O1-δ

Q. Liu^*, C. L. Gan, C. L. Yuan, G. C. Han

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

25 Citations (Scopus)

Abstract

Using two suitably designed thin film systems, the impact of metallic cobalt nanodots on the mechanism of ferromagnetism (FM) in ZnO thin films was studied. At a relatively higher oxygen partial pressure, Co nanodots embedded ZnO thin films no longer show FM, as compared to Co-doped ZnO dilute magnetic semiconductor (DMS). The structural and magnetic properties of these two systems support the hypothesis that (1) the FM of DMS thin films is due to bound magnetic polarons instead of cobalt nanoclusters and (2) the critical defect concentration is the key parameter which controls the FM properties in DMS thin films.

Original language	English
Article number	032501
Journal	Applied Physics Letters
Volume	92
Issue number	3
DOIs	https://doi.org/10.1063/1.2835702
Publication status	Published - 2008
Externally published	Yes

ASJC Scopus Subject Areas

Physics and Astronomy (miscellaneous)

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abstract = "Using two suitably designed thin film systems, the impact of metallic cobalt nanodots on the mechanism of ferromagnetism (FM) in ZnO thin films was studied. At a relatively higher oxygen partial pressure, Co nanodots embedded ZnO thin films no longer show FM, as compared to Co-doped ZnO dilute magnetic semiconductor (DMS). The structural and magnetic properties of these two systems support the hypothesis that (1) the FM of DMS thin films is due to bound magnetic polarons instead of cobalt nanoclusters and (2) the critical defect concentration is the key parameter which controls the FM properties in DMS thin films.",

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AU - Liu, Q.

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AU - Han, G. C.

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N2 - Using two suitably designed thin film systems, the impact of metallic cobalt nanodots on the mechanism of ferromagnetism (FM) in ZnO thin films was studied. At a relatively higher oxygen partial pressure, Co nanodots embedded ZnO thin films no longer show FM, as compared to Co-doped ZnO dilute magnetic semiconductor (DMS). The structural and magnetic properties of these two systems support the hypothesis that (1) the FM of DMS thin films is due to bound magnetic polarons instead of cobalt nanoclusters and (2) the critical defect concentration is the key parameter which controls the FM properties in DMS thin films.

AB - Using two suitably designed thin film systems, the impact of metallic cobalt nanodots on the mechanism of ferromagnetism (FM) in ZnO thin films was studied. At a relatively higher oxygen partial pressure, Co nanodots embedded ZnO thin films no longer show FM, as compared to Co-doped ZnO dilute magnetic semiconductor (DMS). The structural and magnetic properties of these two systems support the hypothesis that (1) the FM of DMS thin films is due to bound magnetic polarons instead of cobalt nanoclusters and (2) the critical defect concentration is the key parameter which controls the FM properties in DMS thin films.

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Role of metallic cobalt in room temperature dilute ferromagnetic semiconductor Zn0.95 Co0.05 O1-δ

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