Role of two-dimensional electron gas (2DEG) in AlGaN/GaN high electron mobility transistor (HEMT) ON-state degradation

G. J. Syaranamual; W. A. Sasangka; R. I. Made; S. Arulkumaran; G. I. Ng; S. C. Foo; C. L. Gan; C. V. Thompson

doi:10.1016/j.microrel.2016.07.012

Role of two-dimensional electron gas (2DEG) in AlGaN/GaN high electron mobility transistor (HEMT) ON-state degradation

G. J. Syaranamual, W. A. Sasangka, R. I. Made, S. Arulkumaran, G. I. Ng, S. C. Foo, C. L. Gan^*, C. V. Thompson

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

29 Citations (Scopus)

Abstract

We have investigated the influence of the two-dimensional electron gas (2DEG) in AlGaN/GaN high electron mobility transistors (HEMTs) on their reliability under ON-state conditions. Devices stressed in the ON-state showed a faster decrease in the maximum drain current (I_Dmax) compared to identical devices stressed in the OFF-state with a comparable electric field and temperature. Scanning electron microscope (SEM) images of ON-state stressed devices showed pit formation at locations away from the gate-edge in the drain-gate access region. Cross-sectional transmission electron microscope (TEM) images also showed dark features at the AlGaN/SiN interface away from the gate edge. Electron energy loss spectroscopy (EELS) analysis of the dark features indicated the presence of gallium, aluminum and oxygen. These dark features correlate with pits observed in the SEM micrographs. It is proposed that in addition to causing joule heating, energetic electrons in the 2D electron gas contribute to device degradation by promoting electrochemical oxidation of the AlGaN.

Original language	English
Pages (from-to)	589-593
Number of pages	5
Journal	Microelectronics Reliability
Volume	64
DOIs	https://doi.org/10.1016/j.microrel.2016.07.012
Publication status	Published - Sept 1 2016
Externally published	Yes

Bibliographical note

Publisher Copyright:
© 2016 Elsevier Ltd

ASJC Scopus Subject Areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Safety, Risk, Reliability and Quality
Surfaces, Coatings and Films
Electrical and Electronic Engineering

Keywords

AlGaN/GaN
HEMT
III-V semiconductor
ON-state
Reliability
Wide band-gap semiconductor

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10.1016/j.microrel.2016.07.012

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title = "Role of two-dimensional electron gas (2DEG) in AlGaN/GaN high electron mobility transistor (HEMT) ON-state degradation",

abstract = "We have investigated the influence of the two-dimensional electron gas (2DEG) in AlGaN/GaN high electron mobility transistors (HEMTs) on their reliability under ON-state conditions. Devices stressed in the ON-state showed a faster decrease in the maximum drain current (IDmax) compared to identical devices stressed in the OFF-state with a comparable electric field and temperature. Scanning electron microscope (SEM) images of ON-state stressed devices showed pit formation at locations away from the gate-edge in the drain-gate access region. Cross-sectional transmission electron microscope (TEM) images also showed dark features at the AlGaN/SiN interface away from the gate edge. Electron energy loss spectroscopy (EELS) analysis of the dark features indicated the presence of gallium, aluminum and oxygen. These dark features correlate with pits observed in the SEM micrographs. It is proposed that in addition to causing joule heating, energetic electrons in the 2D electron gas contribute to device degradation by promoting electrochemical oxidation of the AlGaN.",

keywords = "AlGaN/GaN, HEMT, III-V semiconductor, ON-state, Reliability, Wide band-gap semiconductor",

author = "Syaranamual, {G. J.} and Sasangka, {W. A.} and Made, {R. I.} and S. Arulkumaran and Ng, {G. I.} and Foo, {S. C.} and Gan, {C. L.} and Thompson, {C. V.}",

note = "Publisher Copyright: {\textcopyright} 2016 Elsevier Ltd",

year = "2016",

month = sep,

day = "1",

doi = "10.1016/j.microrel.2016.07.012",

language = "English",

volume = "64",

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AU - Syaranamual, G. J.

AU - Sasangka, W. A.

AU - Made, R. I.

AU - Arulkumaran, S.

AU - Ng, G. I.

AU - Foo, S. C.

AU - Gan, C. L.

AU - Thompson, C. V.

PY - 2016/9/1

Y1 - 2016/9/1

N2 - We have investigated the influence of the two-dimensional electron gas (2DEG) in AlGaN/GaN high electron mobility transistors (HEMTs) on their reliability under ON-state conditions. Devices stressed in the ON-state showed a faster decrease in the maximum drain current (IDmax) compared to identical devices stressed in the OFF-state with a comparable electric field and temperature. Scanning electron microscope (SEM) images of ON-state stressed devices showed pit formation at locations away from the gate-edge in the drain-gate access region. Cross-sectional transmission electron microscope (TEM) images also showed dark features at the AlGaN/SiN interface away from the gate edge. Electron energy loss spectroscopy (EELS) analysis of the dark features indicated the presence of gallium, aluminum and oxygen. These dark features correlate with pits observed in the SEM micrographs. It is proposed that in addition to causing joule heating, energetic electrons in the 2D electron gas contribute to device degradation by promoting electrochemical oxidation of the AlGaN.

AB - We have investigated the influence of the two-dimensional electron gas (2DEG) in AlGaN/GaN high electron mobility transistors (HEMTs) on their reliability under ON-state conditions. Devices stressed in the ON-state showed a faster decrease in the maximum drain current (IDmax) compared to identical devices stressed in the OFF-state with a comparable electric field and temperature. Scanning electron microscope (SEM) images of ON-state stressed devices showed pit formation at locations away from the gate-edge in the drain-gate access region. Cross-sectional transmission electron microscope (TEM) images also showed dark features at the AlGaN/SiN interface away from the gate edge. Electron energy loss spectroscopy (EELS) analysis of the dark features indicated the presence of gallium, aluminum and oxygen. These dark features correlate with pits observed in the SEM micrographs. It is proposed that in addition to causing joule heating, energetic electrons in the 2D electron gas contribute to device degradation by promoting electrochemical oxidation of the AlGaN.

KW - AlGaN/GaN

KW - HEMT

KW - III-V semiconductor

KW - ON-state

KW - Reliability

KW - Wide band-gap semiconductor

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JO - Microelectronics Reliability

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ER -

Role of two-dimensional electron gas (2DEG) in AlGaN/GaN high electron mobility transistor (HEMT) ON-state degradation

Abstract

Bibliographical note

ASJC Scopus Subject Areas

Keywords

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