Room temperature ferromagnetic Dilute magnetic semiconductor Zn 0.95Co0.05O

Q. Liu; C. L. Gan; G. C. Han

Room temperature ferromagnetic Dilute magnetic semiconductor Zn _0.95Co_0.05O

Q. Liu^*, C. L. Gan, G. C. Han

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Dilute magnetic semiconductors (DMSs) are semiconductors doped with magnetic elements, and DMS materials development is needed for the realization of spintronics devices. However, the origin of the contributions to the ferromagnetism in group II-VI DMS is still under debate. In this paper, we report on our study of ZnO thin films doped with transitional metal cobalt and ZnO thin films embedded with cobalt nanodots, fabricated through the use of Pulsed Laser Deposition technique. Different M-H curves were observed from SQUID measurements for the two systems prepared at 5 × 10^-7 oxygen partial pressure, which shows that the contribution of room temperature ferromagnetism (RTFM) in our dilute magnetic semiconductor system is not mainly due to the metallic cobalt nanoclusters. Instead, oxygen vacancies or zinc interstitials would be the more likely factors that contribute to the RTFM in our DMS system. XRD and TEM were also used to characterize the structure of these two systems.

Original language	English
Title of host publication	Materials Science and Technology Conference and Exhibition, MS and T'07 - "Exploring Structure, Processing, and Applications Across Multiple Materials Systems"
Publisher	Materials Science and Technology
Pages	870-879
Number of pages	10
ISBN (Print)	9781605601335
Publication status	Published - 2007
Externally published	Yes
Event	Materials Science and Technology Conference and Exhibition, MS and T'07 - "Exploring Structure, Processing, and Applications Across Multiple Materials Systems" - Detroit, MI, United States Duration: Sept 16 2007 → Sept 20 2007

Publication series

Name	Materials Science and Technology Conference and Exhibition, MS and T'07 - "Exploring Structure, Processing, and Applications Across Multiple Materials Systems"
Volume	2

Conference

Conference	Materials Science and Technology Conference and Exhibition, MS and T'07 - "Exploring Structure, Processing, and Applications Across Multiple Materials Systems"
Country/Territory	United States
City	Detroit, MI
Period	9/16/07 → 9/20/07

ASJC Scopus Subject Areas

Industrial and Manufacturing Engineering
Mechanical Engineering
Mechanics of Materials
General Materials Science
Condensed Matter Physics

Keywords

DMSs
Magnetic Semiconductor
ZnO

Cite this

Liu, Q., Gan, C. L., & Han, G. C. (2007). Room temperature ferromagnetic Dilute magnetic semiconductor Zn _0.95Co_0.05O. In Materials Science and Technology Conference and Exhibition, MS and T'07 - "Exploring Structure, Processing, and Applications Across Multiple Materials Systems" (pp. 870-879). (Materials Science and Technology Conference and Exhibition, MS and T'07 - "Exploring Structure, Processing, and Applications Across Multiple Materials Systems"; Vol. 2). Materials Science and Technology.

Liu, Q. ; Gan, C. L. ; Han, G. C. / Room temperature ferromagnetic Dilute magnetic semiconductor Zn _0.95Co_0.05O. Materials Science and Technology Conference and Exhibition, MS and T'07 - "Exploring Structure, Processing, and Applications Across Multiple Materials Systems". Materials Science and Technology, 2007. pp. 870-879 (Materials Science and Technology Conference and Exhibition, MS and T'07 - "Exploring Structure, Processing, and Applications Across Multiple Materials Systems").

@inproceedings{83b00e42b803491f80cddd158357d62d,

title = "Room temperature ferromagnetic Dilute magnetic semiconductor Zn 0.95Co0.05O",

abstract = "Dilute magnetic semiconductors (DMSs) are semiconductors doped with magnetic elements, and DMS materials development is needed for the realization of spintronics devices. However, the origin of the contributions to the ferromagnetism in group II-VI DMS is still under debate. In this paper, we report on our study of ZnO thin films doped with transitional metal cobalt and ZnO thin films embedded with cobalt nanodots, fabricated through the use of Pulsed Laser Deposition technique. Different M-H curves were observed from SQUID measurements for the two systems prepared at 5 × 10-7 oxygen partial pressure, which shows that the contribution of room temperature ferromagnetism (RTFM) in our dilute magnetic semiconductor system is not mainly due to the metallic cobalt nanoclusters. Instead, oxygen vacancies or zinc interstitials would be the more likely factors that contribute to the RTFM in our DMS system. XRD and TEM were also used to characterize the structure of these two systems.",

keywords = "DMSs, Magnetic Semiconductor, ZnO",

author = "Q. Liu and Gan, \{C. L.\} and Han, \{G. C.\}",

year = "2007",

language = "English",

isbn = "9781605601335",

series = "Materials Science and Technology Conference and Exhibition, MS and T'07 - {"}Exploring Structure, Processing, and Applications Across Multiple Materials Systems{"}",

publisher = "Materials Science and Technology",

pages = "870--879",

booktitle = "Materials Science and Technology Conference and Exhibition, MS and T'07 - {"}Exploring Structure, Processing, and Applications Across Multiple Materials Systems{"}",

note = "Materials Science and Technology Conference and Exhibition, MS and T'07 - {"}Exploring Structure, Processing, and Applications Across Multiple Materials Systems{"} ; Conference date: 16-09-2007 Through 20-09-2007",

}

Liu, Q, Gan, CL & Han, GC 2007, Room temperature ferromagnetic Dilute magnetic semiconductor Zn _0.95Co_0.05O. in Materials Science and Technology Conference and Exhibition, MS and T'07 - "Exploring Structure, Processing, and Applications Across Multiple Materials Systems". Materials Science and Technology Conference and Exhibition, MS and T'07 - "Exploring Structure, Processing, and Applications Across Multiple Materials Systems", vol. 2, Materials Science and Technology, pp. 870-879, Materials Science and Technology Conference and Exhibition, MS and T'07 - "Exploring Structure, Processing, and Applications Across Multiple Materials Systems", Detroit, MI, United States, 9/16/07.

Room temperature ferromagnetic Dilute magnetic semiconductor Zn _0.95Co_0.05O. / Liu, Q.; Gan, C. L.; Han, G. C.
Materials Science and Technology Conference and Exhibition, MS and T'07 - "Exploring Structure, Processing, and Applications Across Multiple Materials Systems". Materials Science and Technology, 2007. p. 870-879 (Materials Science and Technology Conference and Exhibition, MS and T'07 - "Exploring Structure, Processing, and Applications Across Multiple Materials Systems"; Vol. 2).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Room temperature ferromagnetic Dilute magnetic semiconductor Zn 0.95Co0.05O

AU - Liu, Q.

AU - Gan, C. L.

AU - Han, G. C.

PY - 2007

Y1 - 2007

N2 - Dilute magnetic semiconductors (DMSs) are semiconductors doped with magnetic elements, and DMS materials development is needed for the realization of spintronics devices. However, the origin of the contributions to the ferromagnetism in group II-VI DMS is still under debate. In this paper, we report on our study of ZnO thin films doped with transitional metal cobalt and ZnO thin films embedded with cobalt nanodots, fabricated through the use of Pulsed Laser Deposition technique. Different M-H curves were observed from SQUID measurements for the two systems prepared at 5 × 10-7 oxygen partial pressure, which shows that the contribution of room temperature ferromagnetism (RTFM) in our dilute magnetic semiconductor system is not mainly due to the metallic cobalt nanoclusters. Instead, oxygen vacancies or zinc interstitials would be the more likely factors that contribute to the RTFM in our DMS system. XRD and TEM were also used to characterize the structure of these two systems.

AB - Dilute magnetic semiconductors (DMSs) are semiconductors doped with magnetic elements, and DMS materials development is needed for the realization of spintronics devices. However, the origin of the contributions to the ferromagnetism in group II-VI DMS is still under debate. In this paper, we report on our study of ZnO thin films doped with transitional metal cobalt and ZnO thin films embedded with cobalt nanodots, fabricated through the use of Pulsed Laser Deposition technique. Different M-H curves were observed from SQUID measurements for the two systems prepared at 5 × 10-7 oxygen partial pressure, which shows that the contribution of room temperature ferromagnetism (RTFM) in our dilute magnetic semiconductor system is not mainly due to the metallic cobalt nanoclusters. Instead, oxygen vacancies or zinc interstitials would be the more likely factors that contribute to the RTFM in our DMS system. XRD and TEM were also used to characterize the structure of these two systems.

KW - DMSs

KW - Magnetic Semiconductor

KW - ZnO

UR - http://www.scopus.com/inward/record.url?scp=58349086043&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=58349086043&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:58349086043

SN - 9781605601335

T3 - Materials Science and Technology Conference and Exhibition, MS and T'07 - "Exploring Structure, Processing, and Applications Across Multiple Materials Systems"

SP - 870

EP - 879

BT - Materials Science and Technology Conference and Exhibition, MS and T'07 - "Exploring Structure, Processing, and Applications Across Multiple Materials Systems"

PB - Materials Science and Technology

T2 - Materials Science and Technology Conference and Exhibition, MS and T'07 - "Exploring Structure, Processing, and Applications Across Multiple Materials Systems"

Y2 - 16 September 2007 through 20 September 2007

ER -

Liu Q, Gan CL, Han GC. Room temperature ferromagnetic Dilute magnetic semiconductor Zn _0.95Co_0.05O. In Materials Science and Technology Conference and Exhibition, MS and T'07 - "Exploring Structure, Processing, and Applications Across Multiple Materials Systems". Materials Science and Technology. 2007. p. 870-879. (Materials Science and Technology Conference and Exhibition, MS and T'07 - "Exploring Structure, Processing, and Applications Across Multiple Materials Systems").