Room-temperature third-order nonlinear Hall effect in Weyl semimetal TaIrTe4

Cong Wang, Rui Chun Xiao, Huiying Liu, Zhaowei Zhang, Shen Lai, Chao Zhu, Hongbing Cai, Naizhou Wang, Shengyao Chen, Ya Deng, Zheng Liu, Shengyuan A. Yang*, Wei Bo Gao*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

30 Citations (Scopus)

Abstract

The second-order nonlinear Hall effect observed in the time-reversal symmetric system has not only shown abundant physical content, but also exhibited potential application prospects. Recently, a third-order nonlinear Hall effect has been observed in MoTe2 and WTe2. However, few-layer MoTe2 and WTe2 are usually unstable in air and the observed third-order nonlinear Hall effect can be measured only at low temperature, which hinders further investigation as well as potential application. Thus, exploring new air-stable material systems with a sizable third-order nonlinear Hall effect at room temperature is an urgent task. Here, in type-II Weyl semimetal TaIrTe4, we observed a pronounced third-order nonlinear Hall effect, which can exist at room temperature and remain stable for months. The third-order nonlinear Hall effect is connected to the Berry-connection polarizability tensor instead of the Berry curvature. The possible mechanism of the observation of the third-order nonlinear Hall effect in TaIrTe4 at room temperature has been discussed. Our findings will open an avenue towards exploring room-temperature nonlinear devices in new quantum materials.

Original languageEnglish
Article numbernwac020
JournalNational Science Review
Volume9
Issue number12
DOIs
Publication statusPublished - Dec 1 2022
Externally publishedYes

Bibliographical note

Publisher Copyright:
© 2022 The Author(s). Published by Oxford University Press on behalf of China Science Publishing & Media Ltd.

ASJC Scopus Subject Areas

  • General

Keywords

  • Berry connection polarizability tensor
  • room temperature
  • third-order nonlinear Hall effect
  • topological material

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