Scalable Fabrication of Single Silicon Vacancy Defect Arrays in Silicon Carbide Using Focused Ion Beam

Junfeng Wang; Xiaoming Zhang; Yu Zhou; Ke Li; Ziyu Wang; Phani Peddibhotla; Fucai Liu; Sven Bauerdick; Axel Rudzinski; Zheng Liu; Weibo Gao

doi:10.1021/acsphotonics.7b00230

Scalable Fabrication of Single Silicon Vacancy Defect Arrays in Silicon Carbide Using Focused Ion Beam

Junfeng Wang, Xiaoming Zhang, Yu Zhou, Ke Li, Ziyu Wang, Phani Peddibhotla, Fucai Liu, Sven Bauerdick, Axel Rudzinski, Zheng Liu^*, Weibo Gao

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

60 Citations (Scopus)

Abstract

In this work, we present a method for scalable, targeted, and maskless fabrication of single silicon vacancy (V_Si) defect arrays in silicon carbide using focused ion beam. First, we studied the photoluminescence spectrum and optically detected magnetic resonance of the generated defect spin ensemble, confirming that the synthesized centers were in the desired defect state. Then we investigated the fluorescence properties of single V_Si defects, and our measurements indicate the presence of a photostable single-photon source. Finally, we find that the Si²⁺ ion to V_Si defect conversion yield increases as the implanted dose decreases. The reliable production of V_Si defects in silicon carbide could pave the way for its applications in quantum photonics and quantum information processing.

Original language	English
Pages (from-to)	1054-1059
Number of pages	6
Journal	ACS Photonics
Volume	4
Issue number	5
DOIs	https://doi.org/10.1021/acsphotonics.7b00230
Publication status	Published - May 17 2017
Externally published	Yes

Bibliographical note

Publisher Copyright:
© 2017 American Chemical Society.

ASJC Scopus Subject Areas

Electronic, Optical and Magnetic Materials
Biotechnology
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

Keywords

arrays
focused ion beam
scalable
silicon carbide
silicon vacancy defect

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10.1021/acsphotonics.7b00230

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title = "Scalable Fabrication of Single Silicon Vacancy Defect Arrays in Silicon Carbide Using Focused Ion Beam",

abstract = "In this work, we present a method for scalable, targeted, and maskless fabrication of single silicon vacancy (VSi) defect arrays in silicon carbide using focused ion beam. First, we studied the photoluminescence spectrum and optically detected magnetic resonance of the generated defect spin ensemble, confirming that the synthesized centers were in the desired defect state. Then we investigated the fluorescence properties of single VSi defects, and our measurements indicate the presence of a photostable single-photon source. Finally, we find that the Si2+ ion to VSi defect conversion yield increases as the implanted dose decreases. The reliable production of VSi defects in silicon carbide could pave the way for its applications in quantum photonics and quantum information processing.",

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AU - Wang, Junfeng

AU - Zhang, Xiaoming

AU - Zhou, Yu

AU - Li, Ke

AU - Wang, Ziyu

AU - Peddibhotla, Phani

AU - Liu, Fucai

AU - Bauerdick, Sven

AU - Rudzinski, Axel

AU - Liu, Zheng

AU - Gao, Weibo

PY - 2017/5/17

Y1 - 2017/5/17

N2 - In this work, we present a method for scalable, targeted, and maskless fabrication of single silicon vacancy (VSi) defect arrays in silicon carbide using focused ion beam. First, we studied the photoluminescence spectrum and optically detected magnetic resonance of the generated defect spin ensemble, confirming that the synthesized centers were in the desired defect state. Then we investigated the fluorescence properties of single VSi defects, and our measurements indicate the presence of a photostable single-photon source. Finally, we find that the Si2+ ion to VSi defect conversion yield increases as the implanted dose decreases. The reliable production of VSi defects in silicon carbide could pave the way for its applications in quantum photonics and quantum information processing.

AB - In this work, we present a method for scalable, targeted, and maskless fabrication of single silicon vacancy (VSi) defect arrays in silicon carbide using focused ion beam. First, we studied the photoluminescence spectrum and optically detected magnetic resonance of the generated defect spin ensemble, confirming that the synthesized centers were in the desired defect state. Then we investigated the fluorescence properties of single VSi defects, and our measurements indicate the presence of a photostable single-photon source. Finally, we find that the Si2+ ion to VSi defect conversion yield increases as the implanted dose decreases. The reliable production of VSi defects in silicon carbide could pave the way for its applications in quantum photonics and quantum information processing.

KW - arrays

KW - focused ion beam

KW - scalable

KW - silicon carbide

KW - silicon vacancy defect

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Scalable Fabrication of Single Silicon Vacancy Defect Arrays in Silicon Carbide Using Focused Ion Beam

Abstract

Bibliographical note

ASJC Scopus Subject Areas

Keywords

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