Abstract
In this paper, we present direct observations of local domain switching in the individual grains of 300nm thick sol-gel PbTiO3 thin films using a piezo-response SPM. It is revealed that almost no domain switching occurs in the c-domain region at 4V, and partially switching takes place at 6V. The switched domain expends the whole grain rapidly by further increasing the bias. The a-domain cannot be reoriented even at the bias up to 10V. High tetragonality of PbTiO3 is believed to induce great strain to suppress the reorientation of a-domains. The polarization contrast difference at various bias voltages may originate from the non-switchable polarization near the bottom electrode and the partially switched domain.
Original language | English |
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Pages (from-to) | 90-94 |
Number of pages | 5 |
Journal | Materials Chemistry and Physics |
Volume | 75 |
Issue number | 1-3 |
DOIs | |
Publication status | Published - Apr 28 2002 |
Externally published | Yes |
Event | ICMAT 2001 Symposium C (Novel and Advanced Ceramics) - Singapore, Singapore Duration: Apr 28 2002 → … |
ASJC Scopus Subject Areas
- General Materials Science
- Condensed Matter Physics
Keywords
- Ferroelectric domain switching
- PbTiO thin film
- Scanning probe microscopy