Self-assembly of ZnO nanowires and the spatial resolved characterization of their luminescence

H. J. Fan; F. Bertram; A. Dadgar; J. Christen; A. Krost; M. Zacharias

doi:10.1088/0957-4484/15/11/003

Self-assembly of ZnO nanowires and the spatial resolved characterization of their luminescence

H. J. Fan^*, F. Bertram, A. Dadgar, J. Christen, A. Krost, M. Zacharias

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

60 Citations (Scopus)

Abstract

The self-assembled growth of ordered ZnO nanowires on GaN/Si layers has been observed at the low temperature of 500°C through Zn evaporation and oxidation. The nanowires have a nearly uniform diameter of 40 nm and length of ∼330 nm. No metal catalyst was used. Interestingly, the nanowires grow on a wetting film of an interconnected vortex-like structure. An empirical model is proposed to explain the growth process. Spatially resolved cathodoluminescence (CL) measurements show a sharp and intense emission (I₈ line) from the nanowires, while weak and redshifted luminescence from the wetting layer. The CL indicates the existence of tensile stress in the wetting layer while the nanowires are fully relaxed.

Original language	English
Pages (from-to)	1401-1404
Number of pages	4
Journal	Nanotechnology
Volume	15
Issue number	11
DOIs	https://doi.org/10.1088/0957-4484/15/11/003
Publication status	Published - Nov 2004
Externally published	Yes

ASJC Scopus Subject Areas

Bioengineering
General Chemistry
General Materials Science
Mechanics of Materials
Mechanical Engineering
Electrical and Electronic Engineering

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@article{02828824c3b943f2a1e656fbccf184ff,

title = "Self-assembly of ZnO nanowires and the spatial resolved characterization of their luminescence",

abstract = "The self-assembled growth of ordered ZnO nanowires on GaN/Si layers has been observed at the low temperature of 500°C through Zn evaporation and oxidation. The nanowires have a nearly uniform diameter of 40 nm and length of ∼330 nm. No metal catalyst was used. Interestingly, the nanowires grow on a wetting film of an interconnected vortex-like structure. An empirical model is proposed to explain the growth process. Spatially resolved cathodoluminescence (CL) measurements show a sharp and intense emission (I8 line) from the nanowires, while weak and redshifted luminescence from the wetting layer. The CL indicates the existence of tensile stress in the wetting layer while the nanowires are fully relaxed.",

author = "Fan, {H. J.} and F. Bertram and A. Dadgar and J. Christen and A. Krost and M. Zacharias",

year = "2004",

month = nov,

doi = "10.1088/0957-4484/15/11/003",

language = "English",

volume = "15",

pages = "1401--1404",

journal = "Nanotechnology",

issn = "0957-4484",

publisher = "IOP Publishing Ltd.",

number = "11",

}

TY - JOUR

T1 - Self-assembly of ZnO nanowires and the spatial resolved characterization of their luminescence

AU - Fan, H. J.

AU - Bertram, F.

AU - Dadgar, A.

AU - Christen, J.

AU - Krost, A.

AU - Zacharias, M.

PY - 2004/11

Y1 - 2004/11

N2 - The self-assembled growth of ordered ZnO nanowires on GaN/Si layers has been observed at the low temperature of 500°C through Zn evaporation and oxidation. The nanowires have a nearly uniform diameter of 40 nm and length of ∼330 nm. No metal catalyst was used. Interestingly, the nanowires grow on a wetting film of an interconnected vortex-like structure. An empirical model is proposed to explain the growth process. Spatially resolved cathodoluminescence (CL) measurements show a sharp and intense emission (I8 line) from the nanowires, while weak and redshifted luminescence from the wetting layer. The CL indicates the existence of tensile stress in the wetting layer while the nanowires are fully relaxed.

AB - The self-assembled growth of ordered ZnO nanowires on GaN/Si layers has been observed at the low temperature of 500°C through Zn evaporation and oxidation. The nanowires have a nearly uniform diameter of 40 nm and length of ∼330 nm. No metal catalyst was used. Interestingly, the nanowires grow on a wetting film of an interconnected vortex-like structure. An empirical model is proposed to explain the growth process. Spatially resolved cathodoluminescence (CL) measurements show a sharp and intense emission (I8 line) from the nanowires, while weak and redshifted luminescence from the wetting layer. The CL indicates the existence of tensile stress in the wetting layer while the nanowires are fully relaxed.

UR - http://www.scopus.com/inward/record.url?scp=9744243545&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=9744243545&partnerID=8YFLogxK

U2 - 10.1088/0957-4484/15/11/003

DO - 10.1088/0957-4484/15/11/003

M3 - Article

AN - SCOPUS:9744243545

SN - 0957-4484

VL - 15

SP - 1401

EP - 1404

JO - Nanotechnology

JF - Nanotechnology

IS - 11

ER -

Self-assembly of ZnO nanowires and the spatial resolved characterization of their luminescence

Abstract

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