Self-organization of nanoneedles in FeGaAs (001) epitaxial thin film

Y. Z. Huang; S. G. Wang; C. Wang; Z. B. Xie; D. J.H. Cockayne; R. C.C. Ward

doi:10.1063/1.2182017

Self-organization of nanoneedles in FeGaAs (001) epitaxial thin film

Y. Z. Huang, S. G. Wang, C. Wang, Z. B. Xie, D. J.H. Cockayne^*, R. C.C. Ward

^*Corresponding author for this work

University of Oxford

Research output: Contribution to journal › Article › peer-review

12 Citations (Scopus)

Abstract

Well-aligned nanoneedles are found to form in a FeGaAs (001) epitaxial thin film when irradiated with a Ga+ ion beam normal to the sample surface at an ion dose of 3× 1017 cm2 in a focused ion beam. These nanoneedles, with their axes perpendicular to the original sample surface, are composed of GaAs nanorods with Fe nanoislands situated at the top. The GaAs nanorods, formed from the GaAs substrate, are crystalline and in the same crystal orientation as the GaAs substrate. The crystalline nature of the Fe thin film is disrupted by the ion sputtering, becoming nanocrystalline Fe islands. It is the thin Fe layer that is responsible for the formation of the nanoneedles. The ion sputtering of the Fe layer roughens the sample surface due to the uneven sputtering rate of the Fe layer. The removal of the Fe layer exposes the substrate to the incident ions, which then sputter the substrate leading to the formation of the nanoneedles.

Original language	English
Article number	103104
Journal	Applied Physics Letters
Volume	88
Issue number	10
DOIs	https://doi.org/10.1063/1.2182017
Publication status	Published - 2006
Externally published	Yes

ASJC Scopus Subject Areas

Physics and Astronomy (miscellaneous)

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title = "Self-organization of nanoneedles in FeGaAs (001) epitaxial thin film",

abstract = "Well-aligned nanoneedles are found to form in a FeGaAs (001) epitaxial thin film when irradiated with a Ga+ ion beam normal to the sample surface at an ion dose of 3× 1017 cm2 in a focused ion beam. These nanoneedles, with their axes perpendicular to the original sample surface, are composed of GaAs nanorods with Fe nanoislands situated at the top. The GaAs nanorods, formed from the GaAs substrate, are crystalline and in the same crystal orientation as the GaAs substrate. The crystalline nature of the Fe thin film is disrupted by the ion sputtering, becoming nanocrystalline Fe islands. It is the thin Fe layer that is responsible for the formation of the nanoneedles. The ion sputtering of the Fe layer roughens the sample surface due to the uneven sputtering rate of the Fe layer. The removal of the Fe layer exposes the substrate to the incident ions, which then sputter the substrate leading to the formation of the nanoneedles.",

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AU - Huang, Y. Z.

AU - Wang, S. G.

AU - Wang, C.

AU - Xie, Z. B.

AU - Cockayne, D. J.H.

AU - Ward, R. C.C.

PY - 2006

Y1 - 2006

N2 - Well-aligned nanoneedles are found to form in a FeGaAs (001) epitaxial thin film when irradiated with a Ga+ ion beam normal to the sample surface at an ion dose of 3× 1017 cm2 in a focused ion beam. These nanoneedles, with their axes perpendicular to the original sample surface, are composed of GaAs nanorods with Fe nanoislands situated at the top. The GaAs nanorods, formed from the GaAs substrate, are crystalline and in the same crystal orientation as the GaAs substrate. The crystalline nature of the Fe thin film is disrupted by the ion sputtering, becoming nanocrystalline Fe islands. It is the thin Fe layer that is responsible for the formation of the nanoneedles. The ion sputtering of the Fe layer roughens the sample surface due to the uneven sputtering rate of the Fe layer. The removal of the Fe layer exposes the substrate to the incident ions, which then sputter the substrate leading to the formation of the nanoneedles.

AB - Well-aligned nanoneedles are found to form in a FeGaAs (001) epitaxial thin film when irradiated with a Ga+ ion beam normal to the sample surface at an ion dose of 3× 1017 cm2 in a focused ion beam. These nanoneedles, with their axes perpendicular to the original sample surface, are composed of GaAs nanorods with Fe nanoislands situated at the top. The GaAs nanorods, formed from the GaAs substrate, are crystalline and in the same crystal orientation as the GaAs substrate. The crystalline nature of the Fe thin film is disrupted by the ion sputtering, becoming nanocrystalline Fe islands. It is the thin Fe layer that is responsible for the formation of the nanoneedles. The ion sputtering of the Fe layer roughens the sample surface due to the uneven sputtering rate of the Fe layer. The removal of the Fe layer exposes the substrate to the incident ions, which then sputter the substrate leading to the formation of the nanoneedles.

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Self-organization of nanoneedles in FeGaAs (001) epitaxial thin film

Abstract

ASJC Scopus Subject Areas

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