Self-organized amorphous material in silicon (0 0 1) by focused ion beam (FIB) system

Y. Huang; D. J.H. Cockayne; C. Marsh; J. M. Titchmarsh; A. K. Petford-Long

doi:10.1016/j.apsusc.2005.03.175

Self-organized amorphous material in silicon (0 0 1) by focused ion beam (FIB) system

Y. Huang^*, D. J.H. Cockayne, C. Marsh, J. M. Titchmarsh, A. K. Petford-Long

^*Corresponding author for this work

University of Oxford

Research output: Contribution to journal › Article › peer-review

12 Citations (Scopus)

Abstract

A method using a focused ion beam (FIB) to prepare a silicon amorphous material is presented. The method involves the redeposition of sputtered material generated during the interaction of the Ga ⁺ ion beam with a silicon substrate material. The shape and dimensions of this amorphous material are self-organized and reproducible. The stability of this amorphous material under electron irradiation was investigated in the transmission electron microscopy (TEM). Electron irradiation can induce recrystallization of the amorphous material, resulting in the lateral and vertical growth, starting at an amorphous-crystalline interface, of polysilicon containing defects.

Original language	English
Pages (from-to)	1954-1958
Number of pages	5
Journal	Applied Surface Science
Volume	252
Issue number	5
DOIs	https://doi.org/10.1016/j.apsusc.2005.03.175
Publication status	Published - Dec 15 2005
Externally published	Yes

ASJC Scopus Subject Areas

General Chemistry
Condensed Matter Physics
General Physics and Astronomy
Surfaces and Interfaces
Surfaces, Coatings and Films

Keywords

Amorphous silicon
Focused ion beam (FIB)
TEM

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10.1016/j.apsusc.2005.03.175

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@article{2b70f680deae4738b31f550e1745fd38,

title = "Self-organized amorphous material in silicon (0 0 1) by focused ion beam (FIB) system",

abstract = " A method using a focused ion beam (FIB) to prepare a silicon amorphous material is presented. The method involves the redeposition of sputtered material generated during the interaction of the Ga + ion beam with a silicon substrate material. The shape and dimensions of this amorphous material are self-organized and reproducible. The stability of this amorphous material under electron irradiation was investigated in the transmission electron microscopy (TEM). Electron irradiation can induce recrystallization of the amorphous material, resulting in the lateral and vertical growth, starting at an amorphous-crystalline interface, of polysilicon containing defects.",

keywords = "Amorphous silicon, Focused ion beam (FIB), TEM",

author = "Y. Huang and Cockayne, {D. J.H.} and C. Marsh and Titchmarsh, {J. M.} and Petford-Long, {A. K.}",

year = "2005",

month = dec,

day = "15",

doi = "10.1016/j.apsusc.2005.03.175",

language = "English",

volume = "252",

pages = "1954--1958",

journal = "Applied Surface Science",

issn = "0169-4332",

publisher = "Elsevier BV",

number = "5",

}

TY - JOUR

T1 - Self-organized amorphous material in silicon (0 0 1) by focused ion beam (FIB) system

AU - Huang, Y.

AU - Cockayne, D. J.H.

AU - Marsh, C.

AU - Titchmarsh, J. M.

AU - Petford-Long, A. K.

PY - 2005/12/15

Y1 - 2005/12/15

N2 - A method using a focused ion beam (FIB) to prepare a silicon amorphous material is presented. The method involves the redeposition of sputtered material generated during the interaction of the Ga + ion beam with a silicon substrate material. The shape and dimensions of this amorphous material are self-organized and reproducible. The stability of this amorphous material under electron irradiation was investigated in the transmission electron microscopy (TEM). Electron irradiation can induce recrystallization of the amorphous material, resulting in the lateral and vertical growth, starting at an amorphous-crystalline interface, of polysilicon containing defects.

AB - A method using a focused ion beam (FIB) to prepare a silicon amorphous material is presented. The method involves the redeposition of sputtered material generated during the interaction of the Ga + ion beam with a silicon substrate material. The shape and dimensions of this amorphous material are self-organized and reproducible. The stability of this amorphous material under electron irradiation was investigated in the transmission electron microscopy (TEM). Electron irradiation can induce recrystallization of the amorphous material, resulting in the lateral and vertical growth, starting at an amorphous-crystalline interface, of polysilicon containing defects.

KW - Amorphous silicon

KW - Focused ion beam (FIB)

KW - TEM

UR - http://www.scopus.com/inward/record.url?scp=27944446057&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=27944446057&partnerID=8YFLogxK

U2 - 10.1016/j.apsusc.2005.03.175

DO - 10.1016/j.apsusc.2005.03.175

M3 - Article

AN - SCOPUS:27944446057

SN - 0169-4332

VL - 252

SP - 1954

EP - 1958

JO - Applied Surface Science

JF - Applied Surface Science

IS - 5

ER -

Self-organized amorphous material in silicon (0 0 1) by focused ion beam (FIB) system

Abstract

ASJC Scopus Subject Areas

Keywords

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