Semiconductor gas sensor based on Pd-doped SnO2 nanorod thin films

Y. C. Lee; Hui Huang; O. K. Tan; M. S. Tse

doi:10.1016/j.snb.2008.01.028

Semiconductor gas sensor based on Pd-doped SnO₂ nanorod thin films

Y. C. Lee, Hui Huang^*, O. K. Tan, M. S. Tse

^*Corresponding author for this work

Nanyang Technological University

Research output: Contribution to journal › Article › peer-review

155 Citations (Scopus)

Abstract

SnO₂ nanorod thin films have been prepared by plasma-enhanced chemical vapor deposition (PECVD) with postplasma treatment. The SnO₂ nanorod thin films were surface modified with Pd nanoparticles and their sensing properties towards H₂ and ethanol gas were studied. It was found that the Pd-doped SnO₂ nanorod thin film sensor exhibits 6 and 2.5 times better response to 1000 ppm H₂ and ethanol at 300 °C compared to the un-doped sample. The improved gas-sensing properties were believed to result from the formation of electron depletion layer and enhanced catalytic dissociation of molecular adsorbates on the Pd nanoparticle surfaces.

Original language	English
Pages (from-to)	239-242
Number of pages	4
Journal	Sensors and Actuators, B: Chemical
Volume	132
Issue number	1
DOIs	https://doi.org/10.1016/j.snb.2008.01.028
Publication status	Published - May 28 2008
Externally published	Yes

ASJC Scopus Subject Areas

Electronic, Optical and Magnetic Materials
Instrumentation
Condensed Matter Physics
Surfaces, Coatings and Films
Metals and Alloys
Electrical and Electronic Engineering
Materials Chemistry

Keywords

Gas sensing
Nanorod thin film
Pd doping
SnO

Access to Document

10.1016/j.snb.2008.01.028

Cite this

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title = "Semiconductor gas sensor based on Pd-doped SnO2 nanorod thin films",

abstract = "SnO2 nanorod thin films have been prepared by plasma-enhanced chemical vapor deposition (PECVD) with postplasma treatment. The SnO2 nanorod thin films were surface modified with Pd nanoparticles and their sensing properties towards H2 and ethanol gas were studied. It was found that the Pd-doped SnO2 nanorod thin film sensor exhibits 6 and 2.5 times better response to 1000 ppm H2 and ethanol at 300 °C compared to the un-doped sample. The improved gas-sensing properties were believed to result from the formation of electron depletion layer and enhanced catalytic dissociation of molecular adsorbates on the Pd nanoparticle surfaces.",

keywords = "Gas sensing, Nanorod thin film, Pd doping, SnO",

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AU - Lee, Y. C.

AU - Huang, Hui

AU - Tan, O. K.

AU - Tse, M. S.

PY - 2008/5/28

Y1 - 2008/5/28

N2 - SnO2 nanorod thin films have been prepared by plasma-enhanced chemical vapor deposition (PECVD) with postplasma treatment. The SnO2 nanorod thin films were surface modified with Pd nanoparticles and their sensing properties towards H2 and ethanol gas were studied. It was found that the Pd-doped SnO2 nanorod thin film sensor exhibits 6 and 2.5 times better response to 1000 ppm H2 and ethanol at 300 °C compared to the un-doped sample. The improved gas-sensing properties were believed to result from the formation of electron depletion layer and enhanced catalytic dissociation of molecular adsorbates on the Pd nanoparticle surfaces.

AB - SnO2 nanorod thin films have been prepared by plasma-enhanced chemical vapor deposition (PECVD) with postplasma treatment. The SnO2 nanorod thin films were surface modified with Pd nanoparticles and their sensing properties towards H2 and ethanol gas were studied. It was found that the Pd-doped SnO2 nanorod thin film sensor exhibits 6 and 2.5 times better response to 1000 ppm H2 and ethanol at 300 °C compared to the un-doped sample. The improved gas-sensing properties were believed to result from the formation of electron depletion layer and enhanced catalytic dissociation of molecular adsorbates on the Pd nanoparticle surfaces.

KW - Gas sensing

KW - Nanorod thin film

KW - Pd doping

KW - SnO

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