Abstract
Electromagnetic semi-continuous directional solidification (ESCDS) was employed to separate and purify Si from Sn-30Si alloy. The experimental results indicate that the enrichment of primary silicon reaches approximately 91% as the solidification rate is 1.5 mm/min high. While Ca and B are removed by segregation, the removal mechanism of Fe is proved to be the recombination of segregation and ferrosilicon impurity phase precipitation. Resulting from the increase of the ratio of surface area to the volume (S/V) of the molten pool, the impurity remove via volatilization was enhanced. The removal ratios of the main impurities in MG-Si such as Al, Fe, Ca, B and P reach 96.55%, 99.05%, 98.81%, 43.33% and 60.53%, respectively. Due to the effective separation and purification effect, high growth rate, low or even no crucible contamination and consumption, ESCDS shows the great potential to further reduce the Sn consumption during Sn-Si solvent refining and increase the purification efficiency.
| Original language | English |
|---|---|
| Pages (from-to) | 54-61 |
| Number of pages | 8 |
| Journal | Materials Science in Semiconductor Processing |
| Volume | 99 |
| DOIs | |
| Publication status | Published - Aug 15 2019 |
| Externally published | Yes |
Bibliographical note
Publisher Copyright:© 2019 Elsevier Ltd
ASJC Scopus Subject Areas
- General Materials Science
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering
Keywords
- Electromagnetic directional solidification
- Elements redistribution behavior
- Sn-Si alloy
- Solidification microstructures