SnO2 nanorods prepared by inductively coupled plasma-enhanced chemical vapor deposition

Y. C. Lee; O. K. Tan; H. Huang; M. S. Tse; H. W. Lau

SnO₂ nanorods prepared by inductively coupled plasma-enhanced chemical vapor deposition

Y. C. Lee, O. K. Tan, H. Huang, M. S. Tse, H. W. Lau

Nanyang Technological University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

SnO₂ nanorods were successfully deposited on SiO₂/Si substrate by inductively coupled plasma-enhanced chemical vapor deposition (PECVD) using dibutyltin diacetate (DBTDA) as the precursor. The SnO₂ nanorods were in situ grown without additional substrate heating. These nanorods have an average diameter between 19 and 27 nm and a length of 190 to 600 nm depending on the deposition parameters. Substrate distance and RF power showed notable effects on the formation of SnO₂ nanorods. These high surface area SnO₂ nanorods showed sensing properties to reducing gases like CO.

Original language	English
Title of host publication	2006 6th IEEE Conference on Nanotechnology, IEEE-NANO 2006
Pages	613-615
Number of pages	3
Publication status	Published - 2006
Externally published	Yes
Event	2006 6th IEEE Conference on Nanotechnology, IEEE-NANO 2006 - Cincinnati, OH, United States Duration: Jun 17 2006 → Jun 20 2006

Publication series

Name	2006 6th IEEE Conference on Nanotechnology, IEEE-NANO 2006
Volume	2

Conference

Conference	2006 6th IEEE Conference on Nanotechnology, IEEE-NANO 2006
Country/Territory	United States
City	Cincinnati, OH
Period	6/17/06 → 6/20/06

ASJC Scopus Subject Areas

Electrical and Electronic Engineering
General Materials Science

Keywords

Nanorods
PECVD
SnO

Cite this

@inproceedings{0c1b3dafaa9f48c5aaba446984df47f7,

title = "SnO2 nanorods prepared by inductively coupled plasma-enhanced chemical vapor deposition",

abstract = "SnO2 nanorods were successfully deposited on SiO2/Si substrate by inductively coupled plasma-enhanced chemical vapor deposition (PECVD) using dibutyltin diacetate (DBTDA) as the precursor. The SnO2 nanorods were in situ grown without additional substrate heating. These nanorods have an average diameter between 19 and 27 nm and a length of 190 to 600 nm depending on the deposition parameters. Substrate distance and RF power showed notable effects on the formation of SnO2 nanorods. These high surface area SnO2 nanorods showed sensing properties to reducing gases like CO.",

keywords = "Nanorods, PECVD, SnO",

author = "Lee, {Y. C.} and Tan, {O. K.} and H. Huang and Tse, {M. S.} and Lau, {H. W.}",

year = "2006",

language = "English",

isbn = "1424400783",

series = "2006 6th IEEE Conference on Nanotechnology, IEEE-NANO 2006",

pages = "613--615",

booktitle = "2006 6th IEEE Conference on Nanotechnology, IEEE-NANO 2006",

note = "2006 6th IEEE Conference on Nanotechnology, IEEE-NANO 2006 ; Conference date: 17-06-2006 Through 20-06-2006",

}

Lee, YC, Tan, OK, Huang, H, Tse, MS & Lau, HW 2006, SnO₂ nanorods prepared by inductively coupled plasma-enhanced chemical vapor deposition. in 2006 6th IEEE Conference on Nanotechnology, IEEE-NANO 2006., 1717178, 2006 6th IEEE Conference on Nanotechnology, IEEE-NANO 2006, vol. 2, pp. 613-615, 2006 6th IEEE Conference on Nanotechnology, IEEE-NANO 2006, Cincinnati, OH, United States, 6/17/06.

SnO₂ nanorods prepared by inductively coupled plasma-enhanced chemical vapor deposition. / Lee, Y. C.; Tan, O. K.; Huang, H. et al.
2006 6th IEEE Conference on Nanotechnology, IEEE-NANO 2006. 2006. p. 613-615 1717178 (2006 6th IEEE Conference on Nanotechnology, IEEE-NANO 2006; Vol. 2).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - SnO2 nanorods prepared by inductively coupled plasma-enhanced chemical vapor deposition

AU - Lee, Y. C.

AU - Tan, O. K.

AU - Huang, H.

AU - Tse, M. S.

AU - Lau, H. W.

PY - 2006

Y1 - 2006

N2 - SnO2 nanorods were successfully deposited on SiO2/Si substrate by inductively coupled plasma-enhanced chemical vapor deposition (PECVD) using dibutyltin diacetate (DBTDA) as the precursor. The SnO2 nanorods were in situ grown without additional substrate heating. These nanorods have an average diameter between 19 and 27 nm and a length of 190 to 600 nm depending on the deposition parameters. Substrate distance and RF power showed notable effects on the formation of SnO2 nanorods. These high surface area SnO2 nanorods showed sensing properties to reducing gases like CO.

AB - SnO2 nanorods were successfully deposited on SiO2/Si substrate by inductively coupled plasma-enhanced chemical vapor deposition (PECVD) using dibutyltin diacetate (DBTDA) as the precursor. The SnO2 nanorods were in situ grown without additional substrate heating. These nanorods have an average diameter between 19 and 27 nm and a length of 190 to 600 nm depending on the deposition parameters. Substrate distance and RF power showed notable effects on the formation of SnO2 nanorods. These high surface area SnO2 nanorods showed sensing properties to reducing gases like CO.

KW - Nanorods

KW - PECVD

KW - SnO

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M3 - Conference contribution

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T3 - 2006 6th IEEE Conference on Nanotechnology, IEEE-NANO 2006

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BT - 2006 6th IEEE Conference on Nanotechnology, IEEE-NANO 2006

T2 - 2006 6th IEEE Conference on Nanotechnology, IEEE-NANO 2006

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