SnO2 nanorods prepared by inductively coupled plasma-enhanced chemical vapor deposition

Y. C. Lee; O. K. Tan; Hui Huang; M. S. Tse; H. W. Lau

doi:10.1109/TNANO.2007.897870

SnO₂ nanorods prepared by inductively coupled plasma-enhanced chemical vapor deposition

Y. C. Lee^*, O. K. Tan, Hui Huang, M. S. Tse, H. W. Lau

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

SnO₂ nanorods were successfully deposited on SiO₂/Si substrate by inductively coupled plasma-enhanced chemical vapor deposition (PECVD) using dibutyltin diacetate (DBTDA) as the precursor. Each of the SnO₂ nanorods in situ grown under catalyst- and template-free growth condition and without any substrate heating was found to be [110] oriented single crystal. These needle-shaped nanorods have an average diameter between 5 and 16 nm and a length of 160 to 250 nm from TEM observation. Substrate distance and RF power showed notable effects on the formation of SnO₂ nanorods.

Original language	English
Pages (from-to)	465-467
Number of pages	3
Journal	IEEE Transactions on Nanotechnology
Volume	6
Issue number	4
DOIs	https://doi.org/10.1109/TNANO.2007.897870
Publication status	Published - Jul 2007
Externally published	Yes

ASJC Scopus Subject Areas

Computer Science Applications
Electrical and Electronic Engineering

Keywords

Nanorods
Plasma- enhanced chemical vapor deposition (PECVD)
SnO

Access to Document

10.1109/TNANO.2007.897870

Cite this

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title = "SnO2 nanorods prepared by inductively coupled plasma-enhanced chemical vapor deposition",

abstract = "SnO2 nanorods were successfully deposited on SiO2/Si substrate by inductively coupled plasma-enhanced chemical vapor deposition (PECVD) using dibutyltin diacetate (DBTDA) as the precursor. Each of the SnO2 nanorods in situ grown under catalyst- and template-free growth condition and without any substrate heating was found to be [110] oriented single crystal. These needle-shaped nanorods have an average diameter between 5 and 16 nm and a length of 160 to 250 nm from TEM observation. Substrate distance and RF power showed notable effects on the formation of SnO2 nanorods.",

keywords = "Nanorods, Plasma- enhanced chemical vapor deposition (PECVD), SnO",

author = "Lee, \{Y. C.\} and Tan, \{O. K.\} and Hui Huang and Tse, \{M. S.\} and Lau, \{H. W.\}",

year = "2007",

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T1 - SnO2 nanorods prepared by inductively coupled plasma-enhanced chemical vapor deposition

AU - Lee, Y. C.

AU - Tan, O. K.

AU - Huang, Hui

AU - Tse, M. S.

AU - Lau, H. W.

PY - 2007/7

Y1 - 2007/7

N2 - SnO2 nanorods were successfully deposited on SiO2/Si substrate by inductively coupled plasma-enhanced chemical vapor deposition (PECVD) using dibutyltin diacetate (DBTDA) as the precursor. Each of the SnO2 nanorods in situ grown under catalyst- and template-free growth condition and without any substrate heating was found to be [110] oriented single crystal. These needle-shaped nanorods have an average diameter between 5 and 16 nm and a length of 160 to 250 nm from TEM observation. Substrate distance and RF power showed notable effects on the formation of SnO2 nanorods.

AB - SnO2 nanorods were successfully deposited on SiO2/Si substrate by inductively coupled plasma-enhanced chemical vapor deposition (PECVD) using dibutyltin diacetate (DBTDA) as the precursor. Each of the SnO2 nanorods in situ grown under catalyst- and template-free growth condition and without any substrate heating was found to be [110] oriented single crystal. These needle-shaped nanorods have an average diameter between 5 and 16 nm and a length of 160 to 250 nm from TEM observation. Substrate distance and RF power showed notable effects on the formation of SnO2 nanorods.

KW - Nanorods

KW - Plasma- enhanced chemical vapor deposition (PECVD)

KW - SnO

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