Abstract
Thin films of LiTaO3 are deposited on silica-on-silicon substrates by sol-gel processing. The films are characterized by means of X-ray diffraction, atomic force microscopy, Raman spectroscopy, and variable angle spectroscopic ellipsometry. The experimental results show that crystallization of the deposited films starts at 600°C. The films annealed at 600 and 700°C have a nanocrystalline nature with the grain size ranging from 21nm to 114nm. The fine crystalline size and the pure ferroelectric phase of the films make them potential candidates for E-O and A-O waveguide applications.
Original language | English |
---|---|
Pages (from-to) | 99-104 |
Number of pages | 6 |
Journal | Ferroelectrics |
Volume | 232 |
Issue number | 1-4 |
DOIs | |
Publication status | Published - 1999 |
Externally published | Yes |
ASJC Scopus Subject Areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
Keywords
- LiTaO
- SiO/Si
- Sol-gel
- Thin film