Sol-gel derived ferroelectric thin films of LiTaO3 on SiO2/Si substrate

S. D. Cheng*, C. H. Kam, Y. Zhou, Y. L. Lam, Y. C. Chan, K. Pita, W. S. Gan

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)

Abstract

Thin films of LiTaO3 are deposited on silica-on-silicon substrates by sol-gel processing. The films are characterized by means of X-ray diffraction, atomic force microscopy, Raman spectroscopy, and variable angle spectroscopic ellipsometry. The experimental results show that crystallization of the deposited films starts at 600°C. The films annealed at 600 and 700°C have a nanocrystalline nature with the grain size ranging from 21nm to 114nm. The fine crystalline size and the pure ferroelectric phase of the films make them potential candidates for E-O and A-O waveguide applications.

Original languageEnglish
Pages (from-to)99-104
Number of pages6
JournalFerroelectrics
Volume232
Issue number1-4
DOIs
Publication statusPublished - 1999
Externally publishedYes

ASJC Scopus Subject Areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Keywords

  • LiTaO
  • SiO/Si
  • Sol-gel
  • Thin film

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