Solid-Ionic Memory in a van der Waals Heterostructure

Jieqiong Chen; Rui Guo; Xiaowei Wang; Chao Zhu; Guiming Cao; Lu You; Ruihuan Duan; Chao Zhu; Shreyash Sudhakar Hadke; Xun Cao; Teddy Salim; Pio John S. Buenconsejo; Manzhang Xu; Xiaoxu Zhao; Jiadong Zhou; Ya Deng; Qingsheng Zeng; Lydia H. Wong; Jingsheng Chen; Fucai Liu; Zheng Liu

doi:10.1021/acsnano.1c05841

Solid-Ionic Memory in a van der Waals Heterostructure

Jieqiong Chen, Rui Guo, Xiaowei Wang, Chao Zhu, Guiming Cao, Lu You, Ruihuan Duan, Chao Zhu, Shreyash Sudhakar Hadke, Xun Cao, Teddy Salim, Pio John S. Buenconsejo, Manzhang Xu, Xiaoxu Zhao, Jiadong Zhou, Ya Deng, Qingsheng Zeng, Lydia H. Wong, Jingsheng Chen^*, Fucai Liu^*Zheng Liu^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

Defect states dominate the performance of low-dimensional nanoelectronics, which deteriorate the serviceability of devices in most cases. But in recent years, some intriguing functionalities are discovered by defect engineering. In this work, we demonstrate a bifunctional memory device of a MoS₂/BiFeO₃/SrTiO₃ van der Waals heterostructure, which can be programmed and erased by solely one kind of external stimuli (light or electrical-gate pulse) via engineering of oxygen-vacancy-based solid-ionic gating. The device shows multibit electrical memory capability (>22 bits) with a large linearly tunable dynamic range of 7.1 × 10⁶ (137 dB). Furthermore, the device can be programmed by green- and red-light illuminations and then erased by UV light pulses. Besides, the photoresponse under red-light illumination reaches a high photoresponsivity (6.7 × 10⁴ A/W) and photodetectivity (2.12 × 10¹³ Jones). These results highlighted solid-ionic memory for building up multifunctional electronic and optoelectronic devices.

Original language	English
Pages (from-to)	221-231
Number of pages	11
Journal	ACS Nano
Volume	16
Issue number	1
DOIs	https://doi.org/10.1021/acsnano.1c05841
Publication status	Published - Jan 25 2022
Externally published	Yes

Bibliographical note

Publisher Copyright:
© 2022 American Chemical Society

ASJC Scopus Subject Areas

General Materials Science
General Engineering
General Physics and Astronomy

Keywords

BiFeO
MoS
multifunctional memory
oxygen vacancy
solid-ionic transistor

Access to Document

10.1021/acsnano.1c05841

Cite this

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title = "Solid-Ionic Memory in a van der Waals Heterostructure",

abstract = "Defect states dominate the performance of low-dimensional nanoelectronics, which deteriorate the serviceability of devices in most cases. But in recent years, some intriguing functionalities are discovered by defect engineering. In this work, we demonstrate a bifunctional memory device of a MoS2/BiFeO3/SrTiO3 van der Waals heterostructure, which can be programmed and erased by solely one kind of external stimuli (light or electrical-gate pulse) via engineering of oxygen-vacancy-based solid-ionic gating. The device shows multibit electrical memory capability (>22 bits) with a large linearly tunable dynamic range of 7.1 × 106 (137 dB). Furthermore, the device can be programmed by green- and red-light illuminations and then erased by UV light pulses. Besides, the photoresponse under red-light illumination reaches a high photoresponsivity (6.7 × 104 A/W) and photodetectivity (2.12 × 1013 Jones). These results highlighted solid-ionic memory for building up multifunctional electronic and optoelectronic devices.",

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author = "Jieqiong Chen and Rui Guo and Xiaowei Wang and Chao Zhu and Guiming Cao and Lu You and Ruihuan Duan and Chao Zhu and Hadke, {Shreyash Sudhakar} and Xun Cao and Teddy Salim and Buenconsejo, {Pio John S.} and Manzhang Xu and Xiaoxu Zhao and Jiadong Zhou and Ya Deng and Qingsheng Zeng and Wong, {Lydia H.} and Jingsheng Chen and Fucai Liu and Zheng Liu",

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AU - Chen, Jieqiong

AU - Guo, Rui

AU - Wang, Xiaowei

AU - Zhu, Chao

AU - Cao, Guiming

AU - You, Lu

AU - Duan, Ruihuan

AU - Zhu, Chao

AU - Hadke, Shreyash Sudhakar

AU - Cao, Xun

AU - Salim, Teddy

AU - Buenconsejo, Pio John S.

AU - Xu, Manzhang

AU - Zhao, Xiaoxu

AU - Zhou, Jiadong

AU - Deng, Ya

AU - Zeng, Qingsheng

AU - Wong, Lydia H.

AU - Chen, Jingsheng

AU - Liu, Fucai

AU - Liu, Zheng

PY - 2022/1/25

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N2 - Defect states dominate the performance of low-dimensional nanoelectronics, which deteriorate the serviceability of devices in most cases. But in recent years, some intriguing functionalities are discovered by defect engineering. In this work, we demonstrate a bifunctional memory device of a MoS2/BiFeO3/SrTiO3 van der Waals heterostructure, which can be programmed and erased by solely one kind of external stimuli (light or electrical-gate pulse) via engineering of oxygen-vacancy-based solid-ionic gating. The device shows multibit electrical memory capability (>22 bits) with a large linearly tunable dynamic range of 7.1 × 106 (137 dB). Furthermore, the device can be programmed by green- and red-light illuminations and then erased by UV light pulses. Besides, the photoresponse under red-light illumination reaches a high photoresponsivity (6.7 × 104 A/W) and photodetectivity (2.12 × 1013 Jones). These results highlighted solid-ionic memory for building up multifunctional electronic and optoelectronic devices.

AB - Defect states dominate the performance of low-dimensional nanoelectronics, which deteriorate the serviceability of devices in most cases. But in recent years, some intriguing functionalities are discovered by defect engineering. In this work, we demonstrate a bifunctional memory device of a MoS2/BiFeO3/SrTiO3 van der Waals heterostructure, which can be programmed and erased by solely one kind of external stimuli (light or electrical-gate pulse) via engineering of oxygen-vacancy-based solid-ionic gating. The device shows multibit electrical memory capability (>22 bits) with a large linearly tunable dynamic range of 7.1 × 106 (137 dB). Furthermore, the device can be programmed by green- and red-light illuminations and then erased by UV light pulses. Besides, the photoresponse under red-light illumination reaches a high photoresponsivity (6.7 × 104 A/W) and photodetectivity (2.12 × 1013 Jones). These results highlighted solid-ionic memory for building up multifunctional electronic and optoelectronic devices.

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Solid-Ionic Memory in a van der Waals Heterostructure

Abstract

Bibliographical note

ASJC Scopus Subject Areas

Keywords

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