Solid source growth of Si oxide nanowires promoted by carbon nanotubes

Congxiang Lu; Wen Wen Liu; Xingli Wang; Xiaocheng Li; Chong Wei Tan; Beng Kang Tay; Philippe Coquet

doi:10.1016/j.apsusc.2014.06.141

Solid source growth of Si oxide nanowires promoted by carbon nanotubes

Congxiang Lu, Wen Wen Liu, Xingli Wang, Xiaocheng Li, Chong Wei Tan, Beng Kang Tay^*, Philippe Coquet

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

We report a method to promote solid source growth of Si oxide nanowires (SiONWs) by using an array of vertically aligned carbon nanotubes (CNTs). It starts with the fabrication of CNT array by plasma enhanced chemical vapor deposition (PECVD) on Si wafers, followed by growth of SiONWs. Herein, CNTs serve as a scaffold, which helps the dispersion of catalysts for SiONWs and also provides space for hydrogen which boosts the diffusion of Si atoms and hence formation of SiONWs. As the result, a three dimensional (3D) hybrid network of densely packed SiONWs and CNTs can be produced rapidly.

Original language	English
Pages (from-to)	119-123
Number of pages	5
Journal	Applied Surface Science
Volume	314
DOIs	https://doi.org/10.1016/j.apsusc.2014.06.141
Publication status	Published - Sept 30 2014
Externally published	Yes

ASJC Scopus Subject Areas

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films

Keywords

Carbon nanotube
Nanowire
Silicon
Solid-liquid-solid mechanism

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10.1016/j.apsusc.2014.06.141

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title = "Solid source growth of Si oxide nanowires promoted by carbon nanotubes",

abstract = "We report a method to promote solid source growth of Si oxide nanowires (SiONWs) by using an array of vertically aligned carbon nanotubes (CNTs). It starts with the fabrication of CNT array by plasma enhanced chemical vapor deposition (PECVD) on Si wafers, followed by growth of SiONWs. Herein, CNTs serve as a scaffold, which helps the dispersion of catalysts for SiONWs and also provides space for hydrogen which boosts the diffusion of Si atoms and hence formation of SiONWs. As the result, a three dimensional (3D) hybrid network of densely packed SiONWs and CNTs can be produced rapidly.",

keywords = "Carbon nanotube, Nanowire, Silicon, Solid-liquid-solid mechanism",

author = "Congxiang Lu and Liu, {Wen Wen} and Xingli Wang and Xiaocheng Li and Tan, {Chong Wei} and Tay, {Beng Kang} and Philippe Coquet",

year = "2014",

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doi = "10.1016/j.apsusc.2014.06.141",

language = "English",

volume = "314",

pages = "119--123",

journal = "Applied Surface Science",

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TY - JOUR

T1 - Solid source growth of Si oxide nanowires promoted by carbon nanotubes

AU - Lu, Congxiang

AU - Liu, Wen Wen

AU - Wang, Xingli

AU - Li, Xiaocheng

AU - Tan, Chong Wei

AU - Tay, Beng Kang

AU - Coquet, Philippe

PY - 2014/9/30

Y1 - 2014/9/30

N2 - We report a method to promote solid source growth of Si oxide nanowires (SiONWs) by using an array of vertically aligned carbon nanotubes (CNTs). It starts with the fabrication of CNT array by plasma enhanced chemical vapor deposition (PECVD) on Si wafers, followed by growth of SiONWs. Herein, CNTs serve as a scaffold, which helps the dispersion of catalysts for SiONWs and also provides space for hydrogen which boosts the diffusion of Si atoms and hence formation of SiONWs. As the result, a three dimensional (3D) hybrid network of densely packed SiONWs and CNTs can be produced rapidly.

AB - We report a method to promote solid source growth of Si oxide nanowires (SiONWs) by using an array of vertically aligned carbon nanotubes (CNTs). It starts with the fabrication of CNT array by plasma enhanced chemical vapor deposition (PECVD) on Si wafers, followed by growth of SiONWs. Herein, CNTs serve as a scaffold, which helps the dispersion of catalysts for SiONWs and also provides space for hydrogen which boosts the diffusion of Si atoms and hence formation of SiONWs. As the result, a three dimensional (3D) hybrid network of densely packed SiONWs and CNTs can be produced rapidly.

KW - Carbon nanotube

KW - Nanowire

KW - Silicon

KW - Solid-liquid-solid mechanism

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DO - 10.1016/j.apsusc.2014.06.141

M3 - Article

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VL - 314

SP - 119

EP - 123

JO - Applied Surface Science

JF - Applied Surface Science

ER -

Solid source growth of Si oxide nanowires promoted by carbon nanotubes

Abstract

ASJC Scopus Subject Areas

Keywords

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