Solution-processable random carbon nanotube networks for thin-film transistors

Qingqing Gong*, Edgar Albert, Bernhard Fabel, Alaa Abdellah, Paolo Lugli, Mary B. Chan-Park, Giuseppe Scarpa

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

10 Citations (Scopus)

Abstract

We report a straightforward process to fabricate carbon nanotube field-effect transistors based on random nanotube networks. This solution-based approach is simple, fast and reliable, which can be applied to printed electronics. We also investigated the transistor performance as a function of nanotube density, content of metallic nanotubes, and channel geometry. Our experiments show that increase of nanotube density results in consistent improvement of carrier mobility, until a threshold density is achieved. Finally, a simple percolation model based on the Monte Carlo method has been developed for simulating the electrical characteristics of the devices. The model offers a basis for further optimization of carbon nanotube network devices.

Original languageEnglish
Title of host publication2011 11th IEEE International Conference on Nanotechnology, NANO 2011
Pages378-381
Number of pages4
DOIs
Publication statusPublished - 2011
Externally publishedYes
Event2011 11th IEEE International Conference on Nanotechnology, NANO 2011 - Portland, OR, United States
Duration: Aug 15 2011Aug 19 2011

Publication series

NameProceedings of the IEEE Conference on Nanotechnology
ISSN (Print)1944-9399
ISSN (Electronic)1944-9380

Conference

Conference2011 11th IEEE International Conference on Nanotechnology, NANO 2011
Country/TerritoryUnited States
CityPortland, OR
Period8/15/118/19/11

ASJC Scopus Subject Areas

  • Bioengineering
  • Electrical and Electronic Engineering
  • Materials Chemistry
  • Condensed Matter Physics

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