Solution-processed bootstrapped organic inverters based on P3HT with a high-κ gate dielectric material

Harshil Narenda Raval; Shree Prakash Tiwari; Ramesh R. Navan; Subodh G. Mhaisalkar; V. Ramgopal Rao

doi:10.1109/LED.2009.2016679

Solution-processed bootstrapped organic inverters based on P3HT with a high-κ gate dielectric material

Harshil Narenda Raval^*, Shree Prakash Tiwari, Ramesh R. Navan, Subodh G. Mhaisalkar, V. Ramgopal Rao

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

43 Citations (Scopus)

Abstract

In this letter, the integration of a high-κ gate dielectric has been demonstrated for achieving low-operating-voltage organic field-effect transistors (OFETs) and circuits based on solution-processed poly(3-hexylthiophene) (P3HT). We have successfully demonstrated all-p-type organic circuits based on P3HT operating at below 4 V supply voltage. The switching behavior is improved by using the bootstrapping technique, with the bootstrapped inverter showing good results with a dc gain (A_v) of -1.7 and V_OH and V_OL values of 3.3 and 0.35 V, respectively. The output swing of the bootstrapped inverter is improved by about 40% when compared to that of simple all-p-type inverters, as demonstrated by using experimental characterizations.

Original language	English
Pages (from-to)	484-486
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	30
Issue number	5
DOIs	https://doi.org/10.1109/LED.2009.2016679
Publication status	Published - 2009
Externally published	Yes

ASJC Scopus Subject Areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Keywords

Bootstrapping
High-κ dielectric
Inverter
Organic field-effect transistor (OFET)

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10.1109/LED.2009.2016679

Cite this

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title = "Solution-processed bootstrapped organic inverters based on P3HT with a high-κ gate dielectric material",

abstract = "In this letter, the integration of a high-κ gate dielectric has been demonstrated for achieving low-operating-voltage organic field-effect transistors (OFETs) and circuits based on solution-processed poly(3-hexylthiophene) (P3HT). We have successfully demonstrated all-p-type organic circuits based on P3HT operating at below 4 V supply voltage. The switching behavior is improved by using the bootstrapping technique, with the bootstrapped inverter showing good results with a dc gain (Av) of -1.7 and VOH and VOL values of 3.3 and 0.35 V, respectively. The output swing of the bootstrapped inverter is improved by about 40% when compared to that of simple all-p-type inverters, as demonstrated by using experimental characterizations.",

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author = "Raval, {Harshil Narenda} and Tiwari, {Shree Prakash} and Navan, {Ramesh R.} and Mhaisalkar, {Subodh G.} and Rao, {V. Ramgopal}",

year = "2009",

doi = "10.1109/LED.2009.2016679",

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AU - Raval, Harshil Narenda

AU - Tiwari, Shree Prakash

AU - Navan, Ramesh R.

AU - Mhaisalkar, Subodh G.

AU - Rao, V. Ramgopal

PY - 2009

Y1 - 2009

N2 - In this letter, the integration of a high-κ gate dielectric has been demonstrated for achieving low-operating-voltage organic field-effect transistors (OFETs) and circuits based on solution-processed poly(3-hexylthiophene) (P3HT). We have successfully demonstrated all-p-type organic circuits based on P3HT operating at below 4 V supply voltage. The switching behavior is improved by using the bootstrapping technique, with the bootstrapped inverter showing good results with a dc gain (Av) of -1.7 and VOH and VOL values of 3.3 and 0.35 V, respectively. The output swing of the bootstrapped inverter is improved by about 40% when compared to that of simple all-p-type inverters, as demonstrated by using experimental characterizations.

AB - In this letter, the integration of a high-κ gate dielectric has been demonstrated for achieving low-operating-voltage organic field-effect transistors (OFETs) and circuits based on solution-processed poly(3-hexylthiophene) (P3HT). We have successfully demonstrated all-p-type organic circuits based on P3HT operating at below 4 V supply voltage. The switching behavior is improved by using the bootstrapping technique, with the bootstrapped inverter showing good results with a dc gain (Av) of -1.7 and VOH and VOL values of 3.3 and 0.35 V, respectively. The output swing of the bootstrapped inverter is improved by about 40% when compared to that of simple all-p-type inverters, as demonstrated by using experimental characterizations.

KW - Bootstrapping

KW - High-κ dielectric

KW - Inverter

KW - Organic field-effect transistor (OFET)

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Solution-processed bootstrapped organic inverters based on P3HT with a high-κ gate dielectric material

Abstract

ASJC Scopus Subject Areas

Keywords

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