Solution processed non-volatile top-gate polymer field-effect transistors

Wei Lin Leong; Nripan Mathews; Bertha Tan; Subramanian Vaidyanathan; Florian Dötz; Subodh Mhaisalkar

doi:10.1039/c1jm10966a

Solution processed non-volatile top-gate polymer field-effect transistors

Wei Lin Leong, Nripan Mathews^*, Bertha Tan, Subramanian Vaidyanathan, Florian Dötz, Subodh Mhaisalkar

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

36 Citations (Scopus)

Abstract

This communication describes development of a top gate solution processable organic memory solution. Transistor memories (p-type and ambipolar) operating at voltages between 20 and 30 V with memory on-off ratios close to 10 ³ at programming speeds of 1 ms were fabricated on glass and flexible PET substrates. Successful retention of the stored state for 1 week is also demonstrated.

Original language	English
Pages (from-to)	8971-8974
Number of pages	4
Journal	Journal of Materials Chemistry
Volume	21
Issue number	25
DOIs	https://doi.org/10.1039/c1jm10966a
Publication status	Published - Jul 7 2011
Externally published	Yes

ASJC Scopus Subject Areas

General Chemistry
Materials Chemistry

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10.1039/c1jm10966a

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abstract = "This communication describes development of a top gate solution processable organic memory solution. Transistor memories (p-type and ambipolar) operating at voltages between 20 and 30 V with memory on-off ratios close to 10 3 at programming speeds of 1 ms were fabricated on glass and flexible PET substrates. Successful retention of the stored state for 1 week is also demonstrated.",

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AU - Mathews, Nripan

AU - Tan, Bertha

AU - Vaidyanathan, Subramanian

AU - Dötz, Florian

AU - Mhaisalkar, Subodh

PY - 2011/7/7

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N2 - This communication describes development of a top gate solution processable organic memory solution. Transistor memories (p-type and ambipolar) operating at voltages between 20 and 30 V with memory on-off ratios close to 10 3 at programming speeds of 1 ms were fabricated on glass and flexible PET substrates. Successful retention of the stored state for 1 week is also demonstrated.

AB - This communication describes development of a top gate solution processable organic memory solution. Transistor memories (p-type and ambipolar) operating at voltages between 20 and 30 V with memory on-off ratios close to 10 3 at programming speeds of 1 ms were fabricated on glass and flexible PET substrates. Successful retention of the stored state for 1 week is also demonstrated.

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Solution processed non-volatile top-gate polymer field-effect transistors

Abstract

ASJC Scopus Subject Areas

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