Solution synthesis of CdIn 2S 4 nanocrystals and their photoelectrical application

Shengjie Peng; Subodh G. Mhaisalkar; Seeram Ramakrishna

doi:10.1016/j.matlet.2012.04.014

Solution synthesis of CdIn ₂S ₄ nanocrystals and their photoelectrical application

Shengjie Peng^*, Subodh G. Mhaisalkar, Seeram Ramakrishna

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

23 Citations (Scopus)

Abstract

CdIn ₂S ₄ nanocrystals were obtained through a hot-injection process and characterized by using X-ray powder diffraction (XRD), transmission electron microscopy (TEM), high-resolution transmission electron microscopy (HRTEM) and UV-vis spectroscopy. The results showed that the CdIn ₂S ₄ nanocrystals with a size of about 10 nm possessed cubic phase and the bandgap of the alloyed nanocrystals was determined to be 2.2 eV, which corresponded to that of the bulk materials. Furthermore, the CdIn ₂S ₄ ink based on these nanocrystals can be used to produce films for prototype photovoltaic devices. After heat treatment at 450°C for 30 min in Ar and sulfur atmospheres, the CdIn ₂S ₄-based solar cell exhibited a primary efficiency of 0.48% under AM 1.5 irradiation (100 mW cm ^-2).

Original language	English
Pages (from-to)	216-218
Number of pages	3
Journal	Materials Letters
Volume	79
DOIs	https://doi.org/10.1016/j.matlet.2012.04.014
Publication status	Published - Jul 15 2012
Externally published	Yes

ASJC Scopus Subject Areas

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Keywords

CdIn S
Nanocrystals
Solar cells
Solution synthesis

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1016/j.matlet.2012.04.014

Cite this

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title = "Solution synthesis of CdIn 2S 4 nanocrystals and their photoelectrical application",

abstract = "CdIn 2S 4 nanocrystals were obtained through a hot-injection process and characterized by using X-ray powder diffraction (XRD), transmission electron microscopy (TEM), high-resolution transmission electron microscopy (HRTEM) and UV-vis spectroscopy. The results showed that the CdIn 2S 4 nanocrystals with a size of about 10 nm possessed cubic phase and the bandgap of the alloyed nanocrystals was determined to be 2.2 eV, which corresponded to that of the bulk materials. Furthermore, the CdIn 2S 4 ink based on these nanocrystals can be used to produce films for prototype photovoltaic devices. After heat treatment at 450°C for 30 min in Ar and sulfur atmospheres, the CdIn 2S 4-based solar cell exhibited a primary efficiency of 0.48% under AM 1.5 irradiation (100 mW cm -2).",

keywords = "CdIn S, Nanocrystals, Solar cells, Solution synthesis",

author = "Shengjie Peng and Mhaisalkar, {Subodh G.} and Seeram Ramakrishna",

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AU - Peng, Shengjie

AU - Mhaisalkar, Subodh G.

AU - Ramakrishna, Seeram

PY - 2012/7/15

Y1 - 2012/7/15

N2 - CdIn 2S 4 nanocrystals were obtained through a hot-injection process and characterized by using X-ray powder diffraction (XRD), transmission electron microscopy (TEM), high-resolution transmission electron microscopy (HRTEM) and UV-vis spectroscopy. The results showed that the CdIn 2S 4 nanocrystals with a size of about 10 nm possessed cubic phase and the bandgap of the alloyed nanocrystals was determined to be 2.2 eV, which corresponded to that of the bulk materials. Furthermore, the CdIn 2S 4 ink based on these nanocrystals can be used to produce films for prototype photovoltaic devices. After heat treatment at 450°C for 30 min in Ar and sulfur atmospheres, the CdIn 2S 4-based solar cell exhibited a primary efficiency of 0.48% under AM 1.5 irradiation (100 mW cm -2).

AB - CdIn 2S 4 nanocrystals were obtained through a hot-injection process and characterized by using X-ray powder diffraction (XRD), transmission electron microscopy (TEM), high-resolution transmission electron microscopy (HRTEM) and UV-vis spectroscopy. The results showed that the CdIn 2S 4 nanocrystals with a size of about 10 nm possessed cubic phase and the bandgap of the alloyed nanocrystals was determined to be 2.2 eV, which corresponded to that of the bulk materials. Furthermore, the CdIn 2S 4 ink based on these nanocrystals can be used to produce films for prototype photovoltaic devices. After heat treatment at 450°C for 30 min in Ar and sulfur atmospheres, the CdIn 2S 4-based solar cell exhibited a primary efficiency of 0.48% under AM 1.5 irradiation (100 mW cm -2).

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KW - Solution synthesis

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